CT25ASJ-8 Datasheet and Replacement
Type Designator: CT25ASJ-8
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
|Ic|ⓘ - Maximum Collector Current: 150(pulse) A @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
Package: MP3
- IGBT Cross-Reference
CT25ASJ-8 Datasheet (PDF)
ct25as-8.pdf

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT25AS-8STROBE FLASHER USECT25AS-8 OUTLINE DRAWING Dimensions in mm6.50.5 0.15.0 0.241.00.9MAX.0.5 0.22.3 2.30.81 2 3wrq GATEq w COLLECTORe EMITTERr COLLECTOReVCES ................................................................................400VICM ..............................................
Datasheet: CT20ASJ-8 , CT20ASL-8 , CT20TM-8 , CT20VM-8 , CT20VML-8 , CT20VS-8 , CT20VSL-8 , CT25AS-8 , GT45F122 , CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , CT60AM-18B , CT60AM-18F .
History: NGTB40N120SWG | JNG30T60FS | RJP60V0DPM | MG300N1US1 | GT10G101 | SGT40N60FD2PT | NGTB50N60FL2
Keywords - CT25ASJ-8 transistor datasheet
CT25ASJ-8 cross reference
CT25ASJ-8 equivalent finder
CT25ASJ-8 lookup
CT25ASJ-8 substitution
CT25ASJ-8 replacement
History: NGTB40N120SWG | JNG30T60FS | RJP60V0DPM | MG300N1US1 | GT10G101 | SGT40N60FD2PT | NGTB50N60FL2



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