CT25ASJ-8 Datasheet. Specs and Replacement

Type Designator: CT25ASJ-8  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V

|Ic| ⓘ - Maximum Collector Current: 150(pulse) A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

Package: MP3

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CT25ASJ-8 datasheet

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CT25ASJ-8

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25AS-8 STROBE FLASHER USE CT25AS-8 OUTLINE DRAWING Dimensions in mm 6.5 0.5 0.1 5.0 0.2 4 1.0 0.9MAX. 0.5 0.2 2.3 2.3 0.8 1 2 3 wr q GATE q w COLLECTOR e EMITTER r COLLECTOR e VCES ................................................................................400V ICM ................................................. See More ⇒

Specs: CT20ASJ-8, CT20ASL-8, CT20TM-8, CT20VM-8, CT20VML-8, CT20VS-8, CT20VSL-8, CT25AS-8, IRG7R313U, CT30SM-12, CT30TM-8, CT30VM-8, CT30VS-8, CT35SM-8, CT40TMH-8, CT60AM-18B, CT60AM-18F

Keywords - CT25ASJ-8 transistor spec

 CT25ASJ-8 cross reference
 CT25ASJ-8 equivalent finder
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