IXER20N120D1 Specs and Replacement

Type Designator: IXER20N120D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 130 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 29 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃

tr ⓘ - Rise Time, typ: 105 nS

Package: ISOPLUS247

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IXER20N120D1 datasheet

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IXER20N120D1

IXER 20N120 IXER 20N120D1 IC25 = 36 A NPT3 IGBT VCES = 1200 V in ISOPLUS247 VCE(sat)typ = 2.4 V C C ISOPLUS247 G G G C Isolated Backside E E E IXER 20N120 IXER 20N120D1 G = Gate C = Collector E = Emitter Features IGBT NPT3 IGBT Symbol Conditions Maximum Ratings - low saturation voltage VCES TVJ = 25 C to 150 C 1200 V - positive temperature coefficient for... See More ⇒

Specs: IXEH25N120, IXEH25N120D1, IXEH40N120, IXEH40N120D1, IXEL40N400, IXEN60N120, IXEN60N120D1, IXER20N120, FGA60N65SMD, IXER35N120D1, IXER60N120, IXGA12N120A2, IXGA12N120A3, IXGA12N60B, IXGA14N120B, IXGA15N120B2, IXGA16N60B2

Keywords - IXER20N120D1 transistor spec

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