All IGBT. IXER20N120D1 Datasheet

 

IXER20N120D1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXER20N120D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 130 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 29 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 105 nS
   Qgⓘ - Total Gate Charge, typ: 100 nC
   Package: ISOPLUS247

 IXER20N120D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXER20N120D1 Datasheet (PDF)

 ..1. Size:342K  ixys
 ixer20n120 ixer20n120d1.pdf

IXER20N120D1 IXER20N120D1

IXER 20N120IXER 20N120D1IC25 = 36 ANPT3 IGBTVCES = 1200 Vin ISOPLUS247VCE(sat)typ = 2.4 VC CISOPLUS247G GGC Isolated BacksideEE EIXER 20N120 IXER 20N120D1 G = Gate C = Collector E = EmitterFeaturesIGBT NPT3 IGBTSymbol Conditions Maximum Ratings - low saturation voltage VCES TVJ = 25C to 150C 1200 V - positive temperature coefficient for

Datasheet: IXEH25N120 , IXEH25N120D1 , IXEH40N120 , IXEH40N120D1 , IXEL40N400 , IXEN60N120 , IXEN60N120D1 , IXER20N120 , IKW75N60T , IXER35N120D1 , IXER60N120 , IXGA12N120A2 , IXGA12N120A3 , IXGA12N60B , IXGA14N120B , IXGA15N120B2 , IXGA16N60B2 .

 

 
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