IXER20N120D1 Datasheet and Replacement
Type Designator: IXER20N120D1
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 130 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 29 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 105 nS
Package: ISOPLUS247
- IGBT Cross-Reference
IXER20N120D1 Datasheet (PDF)
ixer20n120 ixer20n120d1.pdf
IXER 20N120IXER 20N120D1IC25 = 36 ANPT3 IGBTVCES = 1200 Vin ISOPLUS247VCE(sat)typ = 2.4 VC CISOPLUS247G GGC Isolated BacksideEE EIXER 20N120 IXER 20N120D1 G = Gate C = Collector E = EmitterFeaturesIGBT NPT3 IGBTSymbol Conditions Maximum Ratings - low saturation voltage VCES TVJ = 25C to 150C 1200 V - positive temperature coefficient for
Datasheet: IXEH25N120 , IXEH25N120D1 , IXEH40N120 , IXEH40N120D1 , IXEL40N400 , IXEN60N120 , IXEN60N120D1 , IXER20N120 , GT30F126 , IXER35N120D1 , IXER60N120 , IXGA12N120A2 , IXGA12N120A3 , IXGA12N60B , IXGA14N120B , IXGA15N120B2 , IXGA16N60B2 .
History: AP50G60SW
Keywords - IXER20N120D1 transistor datasheet
IXER20N120D1 cross reference
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History: AP50G60SW
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