All IGBT. CT30SM-12 Equivalents Search

 

CT30SM-12 Specs and Replacement


   Type Designator: CT30SM-12
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 135 nS
   Coesⓘ - Output Capacitance, typ: 180 pF
   Package: TO3P
 

 CT30SM-12 Substitution

   - IGBT ⓘ Cross-Reference Search

 

CT30SM-12 specs

 ..1. Size:41K  mitsubishi
 ct30sm-12.pdf pdf_icon

CT30SM-12

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30SM-12 GENERAL INVERTER UPS USE CT30SM-12 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 r 3.2 2 4.4 1.0 q w e 5.45 5.45 0.6 2.8 4 wr q GATE q w COLLECTOR VCES ................................................................................600V e EMITTER IC ............................................................ See More ⇒

Specs: CT20ASL-8 , CT20TM-8 , CT20VM-8 , CT20VML-8 , CT20VS-8 , CT20VSL-8 , CT25AS-8 , CT25ASJ-8 , IRG7R313U , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , CT60AM-18B , CT60AM-18F , CT60AM-20 .

Keywords - CT30SM-12 transistor spec

 CT30SM-12 cross reference
 CT30SM-12 equivalent finder
 CT30SM-12 lookup
 CT30SM-12 substitution
 CT30SM-12 replacement

 

 
Back to Top

 


 
.