CT30SM-12 IGBT. Datasheet pdf. Equivalent
Type Designator: CT30SM-12
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 250
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 30
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.5
Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 135
Collector Capacity (Cc), typ, pF: 180
Package: TO3P
CT30SM-12 Transistor Equivalent Substitute - IGBT Cross-Reference Search
CT30SM-12 Datasheet (PDF)
ct30sm-12.pdf
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MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT30SM-12GENERAL INVERTER UPS USECT30SM-12 OUTLINE DRAWING Dimensions in mm4.515.9MAX.1.5r 3.224.41.0q w e5.45 5.45 0.6 2.84wrq GATEq w COLLECTORVCES ................................................................................600Ve EMITTERIC .........................................................
Datasheet: CT20ASL-8 , CT20TM-8 , CT20VM-8 , CT20VML-8 , CT20VS-8 , CT20VSL-8 , CT25AS-8 , CT25ASJ-8 , IHW40T60 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , CT60AM-18B , CT60AM-18F , CT60AM-20 .
![CT30SM-12](https://alltransistors.com/images/us.png)
![CT30SM-12](https://alltransistors.com/images/es.png)
![CT30SM-12](https://alltransistors.com/images/ru.png)
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IGBT: TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ | TT060U065FB | TT060U060EQ | TT050U065FBC | TT050U065FB | TT050K065FQ