All IGBT. CT30SM-12 Datasheet

 

CT30SM-12 Datasheet and Replacement


   Type Designator: CT30SM-12
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 135 nS
   Coesⓘ - Output Capacitance, typ: 180 pF
   Package: TO3P
 

 CT30SM-12 substitution

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CT30SM-12 Datasheet (PDF)

 ..1. Size:41K  mitsubishi
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CT30SM-12

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT30SM-12GENERAL INVERTER UPS USECT30SM-12 OUTLINE DRAWING Dimensions in mm4.515.9MAX.1.5r 3.224.41.0q w e5.45 5.45 0.6 2.84wrq GATEq w COLLECTORVCES ................................................................................600Ve EMITTERIC .........................................................

Datasheet: CT20ASL-8 , CT20TM-8 , CT20VM-8 , CT20VML-8 , CT20VS-8 , CT20VSL-8 , CT25AS-8 , CT25ASJ-8 , FGH60N60SFD , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , CT60AM-18B , CT60AM-18F , CT60AM-20 .

Keywords - CT30SM-12 transistor datasheet

 CT30SM-12 cross reference
 CT30SM-12 equivalent finder
 CT30SM-12 lookup
 CT30SM-12 substitution
 CT30SM-12 replacement

 

 
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