CT30TM-8 Datasheet and Replacement
Type Designator: CT30TM-8
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 180(pulse) A @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
Package: TO220F
- IGBT Cross-Reference
CT30TM-8 Datasheet (PDF)
ct30tm-8.pdf
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT30TM-8STROBE FLASHER USECT30TM-8 OUTLINE DRAWING Dimensions in mm10.5MAX.2.85.2 3.21.3MAX.0.82.54 2.54 0.5 2.6qwewq GATEq w COLLECTORe EMITTERVCES ............................................................................... 400VeICM .........................................................................
Datasheet: CT20TM-8 , CT20VM-8 , CT20VML-8 , CT20VS-8 , CT20VSL-8 , CT25AS-8 , CT25ASJ-8 , CT30SM-12 , YGW60N65F1A1 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 .
History: MG25Q6ES51 | 7MBR75U2B060
Keywords - CT30TM-8 transistor datasheet
CT30TM-8 cross reference
CT30TM-8 equivalent finder
CT30TM-8 lookup
CT30TM-8 substitution
CT30TM-8 replacement
History: MG25Q6ES51 | 7MBR75U2B060
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