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CT30TM-8 Specs and Replacement


   Type Designator: CT30TM-8
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 180(pulse) A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   Package: TO220F
 

 CT30TM-8 Substitution

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CT30TM-8 specs

 ..1. Size:29K  mitsubishi
 ct30tm-8.pdf pdf_icon

CT30TM-8

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30TM-8 STROBE FLASHER USE CT30TM-8 OUTLINE DRAWING Dimensions in mm 10.5MAX. 2.8 5.2 3.2 1.3MAX. 0.8 2.54 2.54 0.5 2.6 qwe w q GATE q w COLLECTOR e EMITTER VCES ............................................................................... 400V e ICM ............................................................................ See More ⇒

Specs: CT20TM-8 , CT20VM-8 , CT20VML-8 , CT20VS-8 , CT20VSL-8 , CT25AS-8 , CT25ASJ-8 , CT30SM-12 , GT30G124 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 .

History: CT20VS-8 | CT20VML-8 | CT30SM-12

Keywords - CT30TM-8 transistor spec

 CT30TM-8 cross reference
 CT30TM-8 equivalent finder
 CT30TM-8 lookup
 CT30TM-8 substitution
 CT30TM-8 replacement

 

 
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