CT30TM-8 Datasheet. Specs and Replacement

Type Designator: CT30TM-8  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 180(pulse) A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

Package: TO220F

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CT30TM-8 datasheet

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CT30TM-8

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30TM-8 STROBE FLASHER USE CT30TM-8 OUTLINE DRAWING Dimensions in mm 10.5MAX. 2.8 5.2 3.2 1.3MAX. 0.8 2.54 2.54 0.5 2.6 qwe w q GATE q w COLLECTOR e EMITTER VCES ............................................................................... 400V e ICM ............................................................................ See More ⇒

Specs: CT20TM-8, CT20VM-8, CT20VML-8, CT20VS-8, CT20VSL-8, CT25AS-8, CT25ASJ-8, CT30SM-12, NGD8201N, CT30VM-8, CT30VS-8, CT35SM-8, CT40TMH-8, CT60AM-18B, CT60AM-18F, CT60AM-20, CT75AM-12

Keywords - CT30TM-8 transistor spec

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 CT30TM-8 equivalent finder
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