IXGB200N60B3 Specs and Replacement

Type Designator: IXGB200N60B3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃

tr ⓘ - Rise Time, typ: 83 nS

Coesⓘ - Output Capacitance, typ: 1260 pF

Package: PLUS264

 IXGB200N60B3 Substitution

- IGBTⓘ Cross-Reference Search

 

IXGB200N60B3 datasheet

 ..1. Size:196K  ixys
 ixgb200n60b3.pdf pdf_icon

IXGB200N60B3

VCES = 600V GenX3TM 600V IGBT IXGB200N60B3 IC110 = 200A Medium speed low Vsat PT VCE(sat) 1.5V IGBTs 5-40 kHz switching tfi(typ) = 183ns PLUS264TM (IXGB) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C (limited by leads) 75 A G ... See More ⇒

Specs: IXGA48N60A3, IXGA48N60B3, IXGA48N60C3, IXGA4N100, IXGA50N60B4, IXGA50N60C4, IXGA7N60BD1, IXGA7N60CD1, IRGP4066D, IXGB75N60BD1, IXGE200N60B, IXGF20N250, IXGF20N300, IXGF25N250, IXGF25N300, IXGF30N400, IXGF32N170

Keywords - IXGB200N60B3 transistor spec

 IXGB200N60B3 cross reference
 IXGB200N60B3 equivalent finder
 IXGB200N60B3 lookup
 IXGB200N60B3 substitution
 IXGB200N60B3 replacement