All IGBT. IXGB200N60B3 Datasheet

 

IXGB200N60B3 Datasheet and Replacement


   Type Designator: IXGB200N60B3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 83 nS
   Coesⓘ - Output Capacitance, typ: 1260 pF
   Qg ⓘ - Total Gate Charge, typ: 750 nC
   Package: PLUS264
 

 IXGB200N60B3 substitution

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IXGB200N60B3 Datasheet (PDF)

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IXGB200N60B3

VCES = 600VGenX3TM 600V IGBTIXGB200N60B3IC110 = 200AMedium speed low Vsat PTVCE(sat) 1.5VIGBTs 5-40 kHz switchingtfi(typ) = 183nsPLUS264TM (IXGB)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C (limited by leads) 75 AG

Datasheet: IXGA48N60A3 , IXGA48N60B3 , IXGA48N60C3 , IXGA4N100 , IXGA50N60B4 , IXGA50N60C4 , IXGA7N60BD1 , IXGA7N60CD1 , JT075N065WED , IXGB75N60BD1 , IXGE200N60B , IXGF20N250 , IXGF20N300 , IXGF25N250 , IXGF25N300 , IXGF30N400 , IXGF32N170 .

History: STGWA60V60DF | AOK50B60D1 | MIXA10W1200TML | RJH60D7DPQ-E0 | NGTB40N120IHRWG

Keywords - IXGB200N60B3 transistor datasheet

 IXGB200N60B3 cross reference
 IXGB200N60B3 equivalent finder
 IXGB200N60B3 lookup
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