IXGB75N60BD1 Specs and Replacement

Type Designator: IXGB75N60BD1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 360 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3(max) V @25℃

tr ⓘ - Rise Time, typ: 57 nS

Coesⓘ - Output Capacitance, typ: 730 pF

Package: PLUS264

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IXGB75N60BD1 datasheet

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IXGB75N60BD1

ADVANCE TECHNICAL INFORMATION IXGB 75N60BD1 VCES = 600 V HiPerFASTTM IC25 = 120 A IGBT with Diode VCE(sat) = 2.3 V tfi = 150 ns Symbol Test Conditions Maximum Ratings PLUS 264 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G (TAB) VGEM Transient 30 V C E IC25 TC = 25 C 120 A G = Gate C = Collector IC90 TC = 90 C75 A ... See More ⇒

Specs: IXGA48N60B3, IXGA48N60C3, IXGA4N100, IXGA50N60B4, IXGA50N60C4, IXGA7N60BD1, IXGA7N60CD1, IXGB200N60B3, SGT60U65FD1PT, IXGE200N60B, IXGF20N250, IXGF20N300, IXGF25N250, IXGF25N300, IXGF30N400, IXGF32N170, IXGF36N300

Keywords - IXGB75N60BD1 transistor spec

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