All IGBT. IXGB75N60BD1 Datasheet

 

IXGB75N60BD1 Datasheet and Replacement


   Type Designator: IXGB75N60BD1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 360 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 57 nS
   Coesⓘ - Output Capacitance, typ: 730 pF
   Qg ⓘ - Total Gate Charge, typ: 248 nC
   Package: PLUS264
 

 IXGB75N60BD1 substitution

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IXGB75N60BD1 Datasheet (PDF)

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IXGB75N60BD1

ADVANCE TECHNICAL INFORMATIONIXGB 75N60BD1VCES = 600 VHiPerFASTTMIC25 = 120 AIGBT with DiodeVCE(sat) = 2.3 Vtfi = 150 nsSymbol Test Conditions Maximum Ratings PLUS 264VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VG (TAB)VGEM Transient 30 VCEIC25 TC = 25C 120 AG = Gate C = CollectorIC90 TC = 90C75 A

Datasheet: IXGA48N60B3 , IXGA48N60C3 , IXGA4N100 , IXGA50N60B4 , IXGA50N60C4 , IXGA7N60BD1 , IXGA7N60CD1 , IXGB200N60B3 , IKW50N60H3 , IXGE200N60B , IXGF20N250 , IXGF20N300 , IXGF25N250 , IXGF25N300 , IXGF30N400 , IXGF32N170 , IXGF36N300 .

History: APT15GP60KG | IXEH40N120D1

Keywords - IXGB75N60BD1 transistor datasheet

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