All IGBT. IXGE200N60B Datasheet

 

IXGE200N60B Datasheet and Replacement


   Type Designator: IXGE200N60B
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 416 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 160 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 45 nS
   Coesⓘ - Output Capacitance, typ: 680 pF
   Qg ⓘ - Total Gate Charge, typ: 350 nC
   Package: ISOPLUS227
 

 IXGE200N60B substitution

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IXGE200N60B Datasheet (PDF)

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IXGE200N60B

IXGE 200N60B VCES = 600 VHiPerFASTTM IGBTIC25 = 160 AVCE(sat) = 2.3 Vtfi = 160nsEISOPLUS 227TM (IXGE)E Symbol Test Conditions Maximum Ratings GVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C 160 A CIL Terminal Current Limit(RMS) 100 A G = Gate, E = Emitter, C = CollectorIC9

Datasheet: IXGA48N60C3 , IXGA4N100 , IXGA50N60B4 , IXGA50N60C4 , IXGA7N60BD1 , IXGA7N60CD1 , IXGB200N60B3 , IXGB75N60BD1 , SGP30N60 , IXGF20N250 , IXGF20N300 , IXGF25N250 , IXGF25N300 , IXGF30N400 , IXGF32N170 , IXGF36N300 , IXGH100N30B3 .

History: SRE100N120FSUDA

Keywords - IXGE200N60B transistor datasheet

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