IXGE200N60B Specs and Replacement

Type Designator: IXGE200N60B

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 416 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 160 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3(max) V @25℃

tr ⓘ - Rise Time, typ: 45 nS

Coesⓘ - Output Capacitance, typ: 680 pF

Package: ISOPLUS227

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IXGE200N60B datasheet

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IXGE200N60B

IXGE 200N60B VCES = 600 V HiPerFASTTM IGBT IC25 = 160 A VCE(sat) = 2.3 V tfi = 160ns E ISOPLUS 227TM (IXGE) E Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C 160 A C IL Terminal Current Limit(RMS) 100 A G = Gate, E = Emitter, C = Collector IC9... See More ⇒

Specs: IXGA48N60C3, IXGA4N100, IXGA50N60B4, IXGA50N60C4, IXGA7N60BD1, IXGA7N60CD1, IXGB200N60B3, IXGB75N60BD1, IRG4PC50U, IXGF20N250, IXGF20N300, IXGF25N250, IXGF25N300, IXGF30N400, IXGF32N170, IXGF36N300, IXGH100N30B3

Keywords - IXGE200N60B transistor spec

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