IXGF36N300 Datasheet and Replacement
Type Designator: IXGF36N300
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 160 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 36 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7(max) V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 185 nS
Coesⓘ - Output Capacitance, typ: 123 pF
Package: ISOPLUS-I4-PAK
- IGBT Cross-Reference
IXGF36N300 Datasheet (PDF)
ixgf36n300.pdf

VCES = 3000VHigh Voltage IGBT IXGF36N300IC25 = 36AFor Capacitor DischargeApplicationsVCE(sat) 2.7V( Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 V12Isolated TabVGES Continuous 20 V5VGEM Transient 30 V1 = Gate 5 = CollectorIC25 TC = 25C 36 A2 = EmitterIC110 TC =
ixgf30n400.pdf

High Voltage IGBT VCES = 4000VIXGF30N400For Capacitor DischargeIC25 = 30AApplicationsVCE(sat) 3.1V( Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 4000 VVGES Continuous 20 V12Isolated TabVGEM Transient 30 V5IC25 TC = 25C 30 A1 = Gate 5 = CollectorIC110 TC = 110C 15 A
ixgf32n170.pdf

VCES = 1700VHigh Voltage IGBT IXGF32N170IC110 = 19AVCE(sat) 3.5V( Electrically Isolated Tab)tfi(typ) = 250nsISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 V12VGES Continuous 20 V5VGEM Transient 30 VISOLATED TABIC25 TC = 25C 44 AIC110 TC = 110C 19 AICM TC = 25C, 1ms 200 A1 = Gate 5 = Col
Datasheet: IXGB75N60BD1 , IXGE200N60B , IXGF20N250 , IXGF20N300 , IXGF25N250 , IXGF25N300 , IXGF30N400 , IXGF32N170 , GT30F125 , IXGH100N30B3 , IXGH100N30C3 , IXGH10N170 , IXGH10N170A , IXGH10N300 , IXGH120N30B3 , IXGH120N30C3 , IXGH12N120A3 .
History: DIM600DDM17-A
Keywords - IXGF36N300 transistor datasheet
IXGF36N300 cross reference
IXGF36N300 equivalent finder
IXGF36N300 lookup
IXGF36N300 substitution
IXGF36N300 replacement
History: DIM600DDM17-A



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