CT35SM-8 Datasheet and Replacement
Type Designator: CT35SM-8
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 200(pulse) A @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
Package: TO3P
- IGBT Cross-Reference
CT35SM-8 Datasheet (PDF)
ct35sm-8.pdf

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT35SM-8STROBE FLASHER USECT35SM-8 OUTLINE DRAWING Dimensions in mm4.515.9MAX.1.5r 3.224.41.0q w e5.45 5.45 0.6 2.84wrq GATEq w COLLECTORe EMITTERr COLLECTORVCES ................................................................................400VeICM ....................................................
Datasheet: CT20VS-8 , CT20VSL-8 , CT25AS-8 , CT25ASJ-8 , CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , IHW20N135R5 , CT40TMH-8 , CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 .
History: JNG20T60KS | NCE40TD120LT | KGF30N135NDH | FGA25N120ANTDTU | GT20D101O | APT30GN60BDQ2G | FD400R33KF2C
Keywords - CT35SM-8 transistor datasheet
CT35SM-8 cross reference
CT35SM-8 equivalent finder
CT35SM-8 lookup
CT35SM-8 substitution
CT35SM-8 replacement
History: JNG20T60KS | NCE40TD120LT | KGF30N135NDH | FGA25N120ANTDTU | GT20D101O | APT30GN60BDQ2G | FD400R33KF2C



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