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CT35SM-8 Specs and Replacement


   Type Designator: CT35SM-8
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 200(pulse) A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   Package: TO3P
 

 CT35SM-8 Substitution

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CT35SM-8 specs

 ..1. Size:31K  mitsubishi
 ct35sm-8.pdf pdf_icon

CT35SM-8

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT35SM-8 STROBE FLASHER USE CT35SM-8 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 r 3.2 2 4.4 1.0 q w e 5.45 5.45 0.6 2.8 4 wr q GATE q w COLLECTOR e EMITTER r COLLECTOR VCES ................................................................................400V e ICM ....................................................... See More ⇒

Specs: CT20VS-8 , CT20VSL-8 , CT25AS-8 , CT25ASJ-8 , CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , IHW20N135R5 , CT40TMH-8 , CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 .

History: CT25ASJ-8

Keywords - CT35SM-8 transistor spec

 CT35SM-8 cross reference
 CT35SM-8 equivalent finder
 CT35SM-8 lookup
 CT35SM-8 substitution
 CT35SM-8 replacement

 

 
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