CT35SM-8 Datasheet. Specs and Replacement

Type Designator: CT35SM-8  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 200(pulse) A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

Package: TO3P

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CT35SM-8 datasheet

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CT35SM-8

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT35SM-8 STROBE FLASHER USE CT35SM-8 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 r 3.2 2 4.4 1.0 q w e 5.45 5.45 0.6 2.8 4 wr q GATE q w COLLECTOR e EMITTER r COLLECTOR VCES ................................................................................400V e ICM ....................................................... See More ⇒

Specs: CT20VS-8, CT20VSL-8, CT25AS-8, CT25ASJ-8, CT30SM-12, CT30TM-8, CT30VM-8, CT30VS-8, RJH3047, CT40TMH-8, CT60AM-18B, CT60AM-18F, CT60AM-20, CT75AM-12, CY20AAJ-8, CY25AAJ-8, VBGN40N120

Keywords - CT35SM-8 transistor spec

 CT35SM-8 cross reference
 CT35SM-8 equivalent finder
 CT35SM-8 lookup
 CT35SM-8 substitution
 CT35SM-8 replacement