All IGBT. CT35SM-8 Datasheet

 

CT35SM-8 Datasheet and Replacement


   Type Designator: CT35SM-8
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 200(pulse) A @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   Package: TO3P
 

 CT35SM-8 substitution

   - IGBT ⓘ Cross-Reference Search

 

CT35SM-8 Datasheet (PDF)

 ..1. Size:31K  mitsubishi
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CT35SM-8

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT35SM-8STROBE FLASHER USECT35SM-8 OUTLINE DRAWING Dimensions in mm4.515.9MAX.1.5r 3.224.41.0q w e5.45 5.45 0.6 2.84wrq GATEq w COLLECTORe EMITTERr COLLECTORVCES ................................................................................400VeICM ....................................................

Datasheet: CT20VS-8 , CT20VSL-8 , CT25AS-8 , CT25ASJ-8 , CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CRG60T60AN3H , CT40TMH-8 , CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 .

History: IXGH30N60BU1

Keywords - CT35SM-8 transistor datasheet

 CT35SM-8 cross reference
 CT35SM-8 equivalent finder
 CT35SM-8 lookup
 CT35SM-8 substitution
 CT35SM-8 replacement

 

 
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