CT35SM-8 IGBT. Datasheet pdf. Equivalent
Type Designator: CT35SM-8
Type: IGBT
Type of IGBT Channel: N
Maximum Collector-Emitter Voltage |Vce|, V: 400
Maximum Gate-Emitter Voltage |Vge|, V: 30
Maximum Collector Current |Ic| @25℃, A: 200(pulse)
Maximum G-E Threshold Voltag |VGE(th)|, V: 7
Maximum Junction Temperature (Tj), ℃: 150
Package: TO3P
CT35SM-8 Transistor Equivalent Substitute - IGBT Cross-Reference Search
CT35SM-8 Datasheet (PDF)
ct35sm-8.pdf
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT35SM-8STROBE FLASHER USECT35SM-8 OUTLINE DRAWING Dimensions in mm4.515.9MAX.1.5r 3.224.41.0q w e5.45 5.45 0.6 2.84wrq GATEq w COLLECTORe EMITTERr COLLECTORVCES ................................................................................400VeICM ....................................................
Datasheet: CT20VS-8 , CT20VSL-8 , CT25AS-8 , CT25ASJ-8 , CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , SGT40N60FD2PN , CT40TMH-8 , CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 .
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IGBT: TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ | TT060U065FB | TT060U060EQ | TT050U065FBC | TT050U065FB | TT050K065FQ