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CT40TMH-8 Specs and Replacement


   Type Designator: CT40TMH-8
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 200(pulse) A @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   Package: TO220F
 

 CT40TMH-8 Substitution

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CT40TMH-8 specs

 ..1. Size:31K  mitsubishi
 ct40tmh-8.pdf pdf_icon

CT40TMH-8

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT40TMH-8 STROBE FLASHER USE CT40TMH-8 OUTLINE DRAWING Dimensions in mm 10.5MAX. 2.8 5.2 3.2 1.3MAX. 0.8 2.54 2.54 0.5 2.6 qwe w q GATE q w COLLECTOR e EMITTER VCES ................................................................................400V e ICM .......................................................................... See More ⇒

Specs: CT20VSL-8 , CT25AS-8 , CT25ASJ-8 , CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , RJH30E2DPP , CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 , VBGN40N60 .

Keywords - CT40TMH-8 transistor spec

 CT40TMH-8 cross reference
 CT40TMH-8 equivalent finder
 CT40TMH-8 lookup
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