CT40TMH-8 Datasheet and Replacement
Type Designator: CT40TMH-8
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 200(pulse) A @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
Package: TO220F
- IGBT Cross-Reference
CT40TMH-8 Datasheet (PDF)
ct40tmh-8.pdf

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT40TMH-8STROBE FLASHER USECT40TMH-8 OUTLINE DRAWING Dimensions in mm10.5MAX.2.85.2 3.21.3MAX.0.82.54 2.54 0.5 2.6qwewq GATEq w COLLECTORe EMITTERVCES ................................................................................400VeICM .......................................................................
Datasheet: CT20VSL-8 , CT25AS-8 , CT25ASJ-8 , CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , SGT40N60FD2PN , CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 , VBGN40N60 .
History: SGTP50V65UFCR3P7 | IXST35N120B | NGTB15N120IHRWG | MSG100D350FHS | 20MT120UFP | MSG20T65HPT1 | MSG40T120FQC
Keywords - CT40TMH-8 transistor datasheet
CT40TMH-8 cross reference
CT40TMH-8 equivalent finder
CT40TMH-8 lookup
CT40TMH-8 substitution
CT40TMH-8 replacement
History: SGTP50V65UFCR3P7 | IXST35N120B | NGTB15N120IHRWG | MSG100D350FHS | 20MT120UFP | MSG20T65HPT1 | MSG40T120FQC



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