CT40TMH-8 Datasheet. Specs and Replacement

Type Designator: CT40TMH-8  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 200(pulse) A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

Package: TO220F

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CT40TMH-8 datasheet

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CT40TMH-8

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT40TMH-8 STROBE FLASHER USE CT40TMH-8 OUTLINE DRAWING Dimensions in mm 10.5MAX. 2.8 5.2 3.2 1.3MAX. 0.8 2.54 2.54 0.5 2.6 qwe w q GATE q w COLLECTOR e EMITTER VCES ................................................................................400V e ICM .......................................................................... See More ⇒

Specs: CT20VSL-8, CT25AS-8, CT25ASJ-8, CT30SM-12, CT30TM-8, CT30VM-8, CT30VS-8, CT35SM-8, IKW50N60T, CT60AM-18B, CT60AM-18F, CT60AM-20, CT75AM-12, CY20AAJ-8, CY25AAJ-8, VBGN40N120, VBGN40N60

Keywords - CT40TMH-8 transistor spec

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