All IGBT. CT60AM-18B Datasheet

 

CT60AM-18B Datasheet and Replacement


   Type Designator: CT60AM-18B
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 120 nS
   Coesⓘ - Output Capacitance, typ: 125 pF
   Package: TO3PL
 

 CT60AM-18B substitution

   - IGBT ⓘ Cross-Reference Search

 

CT60AM-18B Datasheet (PDF)

 ..1. Size:42K  mitsubishi
 ct60am-18b.pdf pdf_icon

CT60AM-18B

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT60AM-18BRESONANT INVERTER USECT60AM-18B OUTLINE DRAWING Dimensions in mm 3.24wrq w qe VCES ............................................................................... 900Vr IC .........................................................................................60AeIntegrated Fast Recovery DiodeTO-3PL

 5.1. Size:82K  mitsubishi
 ct60am-18f.pdf pdf_icon

CT60AM-18B

MITSUBISHI Nch IGBTMITSUBISHI Nch IGBTCT60AM-18FCT60AM-18FINSULATED GATE BIPOLAR TRANSISTORINSULATED GATE BIPOLAR TRANSISTORCT60AM-18F OUTLINE DRAWING Dimensions in mm520MAX.23.221 0.535.45 5.454.0 VCES ............................................................................... 900V IC ...........................................

 7.1. Size:460K  mitsubishi
 ct60am-20.pdf pdf_icon

CT60AM-18B

Datasheet: CT25AS-8 , CT25ASJ-8 , CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , MBQ50T65FDSC , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 , VBGN40N60 , VBGN50N60 .

Keywords - CT60AM-18B transistor datasheet

 CT60AM-18B cross reference
 CT60AM-18B equivalent finder
 CT60AM-18B lookup
 CT60AM-18B substitution
 CT60AM-18B replacement

 

 
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