All IGBT. CT60AM-18B Datasheet

 

CT60AM-18B IGBT. Datasheet pdf. Equivalent


   Type Designator: CT60AM-18B
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 200
   Maximum Collector-Emitter Voltage |Vce|, V: 900
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 60
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 120
   Collector Capacity (Cc), typ, pF: 125
   Package: TO3PL

 CT60AM-18B Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CT60AM-18B Datasheet (PDF)

 ..1. Size:42K  mitsubishi
 ct60am-18b.pdf

CT60AM-18B CT60AM-18B

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT60AM-18BRESONANT INVERTER USECT60AM-18B OUTLINE DRAWING Dimensions in mm 3.24wrq w qe VCES ............................................................................... 900Vr IC .........................................................................................60AeIntegrated Fast Recovery DiodeTO-3PL

 5.1. Size:82K  mitsubishi
 ct60am-18f.pdf

CT60AM-18B CT60AM-18B

MITSUBISHI Nch IGBTMITSUBISHI Nch IGBTCT60AM-18FCT60AM-18FINSULATED GATE BIPOLAR TRANSISTORINSULATED GATE BIPOLAR TRANSISTORCT60AM-18F OUTLINE DRAWING Dimensions in mm520MAX.23.221 0.535.45 5.454.0 VCES ............................................................................... 900V IC ...........................................

 7.1. Size:460K  mitsubishi
 ct60am-20.pdf

CT60AM-18B CT60AM-18B

Datasheet: CT25AS-8 , CT25ASJ-8 , CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , YGW40N65F1 , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 , VBGN40N60 , VBGN50N60 .

 

 
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