CT60AM-18B Datasheet. Specs and Replacement
Type Designator: CT60AM-18B 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 120 nS
Coesⓘ - Output Capacitance, typ: 125 pF
Package: TO3PL
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CT60AM-18B Substitution
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CT60AM-18B datasheet
ct60am-18b.pdf
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm 3.2 4 wr q w q e VCES ............................................................................... 900V r IC .........................................................................................60A e Integrated Fast Recovery Diode TO-3PL ... See More ⇒
ct60am-18f.pdf
MITSUBISHI Nch IGBT MITSUBISHI Nch IGBT CT60AM-18F CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. 2 3.2 2 1 0.5 3 5.45 5.45 4.0 VCES ............................................................................... 900V IC .............................................. See More ⇒
Specs: CT25AS-8, CT25ASJ-8, CT30SM-12, CT30TM-8, CT30VM-8, CT30VS-8, CT35SM-8, CT40TMH-8, RJP63F3DPP-M0, CT60AM-18F, CT60AM-20, CT75AM-12, CY20AAJ-8, CY25AAJ-8, VBGN40N120, VBGN40N60, VBGN50N60
Keywords - CT60AM-18B transistor spec
CT60AM-18B cross reference
CT60AM-18B equivalent finder
CT60AM-18B lookup
CT60AM-18B substitution
CT60AM-18B replacement
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