CT60AM-18F IGBT. Datasheet pdf. Equivalent
Type Designator: CT60AM-18F
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 180
Maximum Collector-Emitter Voltage |Vce|, V: 900
Maximum Gate-Emitter Voltage |Vge|, V: 25
Maximum Collector Current |Ic| @25℃, A: 60
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.1
Maximum G-E Threshold Voltag |VGE(th)|, V: 6
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 100
Collector Capacity (Cc), typ, pF: 115
Package: TO3PL
CT60AM-18F Transistor Equivalent Substitute - IGBT Cross-Reference Search
CT60AM-18F Datasheet (PDF)
ct60am-18f.pdf
MITSUBISHI Nch IGBTMITSUBISHI Nch IGBTCT60AM-18FCT60AM-18FINSULATED GATE BIPOLAR TRANSISTORINSULATED GATE BIPOLAR TRANSISTORCT60AM-18F OUTLINE DRAWING Dimensions in mm520MAX.23.221 0.535.45 5.454.0 VCES ............................................................................... 900V IC ...........................................
ct60am-18b.pdf
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT60AM-18BRESONANT INVERTER USECT60AM-18B OUTLINE DRAWING Dimensions in mm 3.24wrq w qe VCES ............................................................................... 900Vr IC .........................................................................................60AeIntegrated Fast Recovery DiodeTO-3PL
Datasheet: CT25ASJ-8 , CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , CT60AM-18B , IRGP4066D , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 , VBGN40N60 , VBGN50N60 , VBGT15N120 .
LIST
Last Update
IGBT: KDG20N120H2 | GT40T321 | SIB30N65G21F | SIW30N65G21F | SIP30N65G21F | SIF30N65G21F | SIB30N60G21B | SIW30N60G21B | SIP30N60G21B | SIF30N60G21B | SL40T65FL1