CT60AM-18F IGBT. Datasheet pdf. Equivalent

Type Designator: CT60AM-18F

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 180W

Maximum Collector-Emitter Voltage |Vce|, V: 900V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.1V

Maximum Gate-Emitter Voltage |Veg|, V: 30V

Maximum Collector Current |Ic|, A: 60A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 50

Maximum Collector Capacity (Cc), pF: 4400pF

Package: TO3PL

CT60AM-18F Transistor Equivalent Substitute - IGBT Cross-Reference Search

CT60AM-18F Datasheet (PDF)

1.1. ct60am-18f.pdf Size:23K _mitsubishi

MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. 2 ?3.2 2 1 0.5 3 5.45 5.45 4.0 VCES ............................................................................... 900V IC .........................................................................................60A GATE Simple drive COLLECTOR EMITTER In

Datasheet: CT25ASJ-8 , CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , CT60AM-18B , IGC70T120T8RM , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , G10N40 , G10N40C1 , G10N40E1 , G10N50 .

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