All IGBT. CT60AM-18F Datasheet

 

CT60AM-18F Datasheet and Replacement


   Type Designator: CT60AM-18F
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 180 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 100 nS
   Coesⓘ - Output Capacitance, typ: 115 pF
   Package: TO3PL
      - IGBT Cross-Reference

 

CT60AM-18F Datasheet (PDF)

 ..1. Size:82K  mitsubishi
 ct60am-18f.pdf pdf_icon

CT60AM-18F

MITSUBISHI Nch IGBTMITSUBISHI Nch IGBTCT60AM-18FCT60AM-18FINSULATED GATE BIPOLAR TRANSISTORINSULATED GATE BIPOLAR TRANSISTORCT60AM-18F OUTLINE DRAWING Dimensions in mm520MAX.23.221 0.535.45 5.454.0 VCES ............................................................................... 900V IC ...........................................

 5.1. Size:42K  mitsubishi
 ct60am-18b.pdf pdf_icon

CT60AM-18F

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT60AM-18BRESONANT INVERTER USECT60AM-18B OUTLINE DRAWING Dimensions in mm 3.24wrq w qe VCES ............................................................................... 900Vr IC .........................................................................................60AeIntegrated Fast Recovery DiodeTO-3PL

 7.1. Size:460K  mitsubishi
 ct60am-20.pdf pdf_icon

CT60AM-18F

Datasheet: CT25ASJ-8 , CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , CT60AM-18B , RJH3047 , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 , VBGN40N60 , VBGN50N60 , VBGT15N120 .

History: TT010N060EQ | IXGR32N170AH1

Keywords - CT60AM-18F transistor datasheet

 CT60AM-18F cross reference
 CT60AM-18F equivalent finder
 CT60AM-18F lookup
 CT60AM-18F substitution
 CT60AM-18F replacement

 

 
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