CT60AM-20 Datasheet and Replacement
Type Designator: CT60AM-20
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 150 nS
Coesⓘ - Output Capacitance, typ: 170 pF
Package: TO3PL
- IGBT Cross-Reference
CT60AM-20 Datasheet (PDF)
ct60am-18b.pdf

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT60AM-18BRESONANT INVERTER USECT60AM-18B OUTLINE DRAWING Dimensions in mm 3.24wrq w qe VCES ............................................................................... 900Vr IC .........................................................................................60AeIntegrated Fast Recovery DiodeTO-3PL
ct60am-18f.pdf

MITSUBISHI Nch IGBTMITSUBISHI Nch IGBTCT60AM-18FCT60AM-18FINSULATED GATE BIPOLAR TRANSISTORINSULATED GATE BIPOLAR TRANSISTORCT60AM-18F OUTLINE DRAWING Dimensions in mm520MAX.23.221 0.535.45 5.454.0 VCES ............................................................................... 900V IC ...........................................
Datasheet: CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , CT60AM-18B , CT60AM-18F , SGT60N60FD1P7 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 , VBGN40N60 , VBGN50N60 , VBGT15N120 , VBGT15N120P .
History: MG25Q6ES51 | 7MBR75U2B060
Keywords - CT60AM-20 transistor datasheet
CT60AM-20 cross reference
CT60AM-20 equivalent finder
CT60AM-20 lookup
CT60AM-20 substitution
CT60AM-20 replacement
History: MG25Q6ES51 | 7MBR75U2B060



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