CT60AM-20 IGBT. Datasheet pdf. Equivalent
Type Designator: CT60AM-20
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 250W
Maximum Collector-Emitter Voltage |Vce|, V: 1000V
Collector-Emitter saturation Voltage |Vcesat|, V: 2.6V
Maximum Gate-Emitter Voltage |Veg|, V: 20V
Maximum Collector Current |Ic|, A: 60A
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 300000
Package: TO3PL
CT60AM-20 Transistor Equivalent Substitute - IGBT Cross-Reference Search
CT60AM-20 Datasheet (PDF)
3.1. ct60am-18f.pdf 
Size:23K _mitsubishi
MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. 2 ?3.2 2 1 0.5 3 5.45 5.45 4.0 VCES ............................................................................... 900V IC .........................................................................................60A GATE Simple drive COLLECTOR EMITTER In
Datasheet: CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , CT60AM-18B , CT60AM-18F , SGW10N60A , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , G10N40 , G10N40C1 , G10N40E1 , G10N50 , G10N50C1 .
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