All IGBT. CT60AM-20 Datasheet

 

CT60AM-20 IGBT. Datasheet pdf. Equivalent


   Type Designator: CT60AM-20
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 150 nS
   Coesⓘ - Output Capacitance, typ: 170 pF
   Package: TO3PL

 CT60AM-20 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CT60AM-20 Datasheet (PDF)

 ..1. Size:460K  mitsubishi
 ct60am-20.pdf

CT60AM-20 CT60AM-20

 7.1. Size:42K  mitsubishi
 ct60am-18b.pdf

CT60AM-20 CT60AM-20

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT60AM-18BRESONANT INVERTER USECT60AM-18B OUTLINE DRAWING Dimensions in mm 3.24wrq w qe VCES ............................................................................... 900Vr IC .........................................................................................60AeIntegrated Fast Recovery DiodeTO-3PL

 7.2. Size:82K  mitsubishi
 ct60am-18f.pdf

CT60AM-20 CT60AM-20

MITSUBISHI Nch IGBTMITSUBISHI Nch IGBTCT60AM-18FCT60AM-18FINSULATED GATE BIPOLAR TRANSISTORINSULATED GATE BIPOLAR TRANSISTORCT60AM-18F OUTLINE DRAWING Dimensions in mm520MAX.23.221 0.535.45 5.454.0 VCES ............................................................................... 900V IC ...........................................

Datasheet: CT30SM-12 , CT30TM-8 , CT30VM-8 , CT30VS-8 , CT35SM-8 , CT40TMH-8 , CT60AM-18B , CT60AM-18F , GT30F131 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 , VBGN40N60 , VBGN50N60 , VBGT15N120 , VBGT15N120P .

 

 
Back to Top