CT60AM-20 Datasheet. Specs and Replacement

Type Designator: CT60AM-20  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃

tr ⓘ - Rise Time, typ: 150 nS

Coesⓘ - Output Capacitance, typ: 170 pF

Package: TO3PL

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CT60AM-20 datasheet

 ..1. Size:460K  mitsubishi
 ct60am-20.pdf pdf_icon

CT60AM-20

... See More ⇒

 7.1. Size:42K  mitsubishi
 ct60am-18b.pdf pdf_icon

CT60AM-20

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm 3.2 4 wr q w q e VCES ............................................................................... 900V r IC .........................................................................................60A e Integrated Fast Recovery Diode TO-3PL ... See More ⇒

 7.2. Size:82K  mitsubishi
 ct60am-18f.pdf pdf_icon

CT60AM-20

MITSUBISHI Nch IGBT MITSUBISHI Nch IGBT CT60AM-18F CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. 2 3.2 2 1 0.5 3 5.45 5.45 4.0 VCES ............................................................................... 900V IC .............................................. See More ⇒

Specs: CT30SM-12, CT30TM-8, CT30VM-8, CT30VS-8, CT35SM-8, CT40TMH-8, CT60AM-18B, CT60AM-18F, GT30G124, CT75AM-12, CY20AAJ-8, CY25AAJ-8, VBGN40N120, VBGN40N60, VBGN50N60, VBGT15N120, VBGT15N120P

Keywords - CT60AM-20 transistor spec

 CT60AM-20 cross reference
 CT60AM-20 equivalent finder
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