CT75AM-12 Datasheet. Specs and Replacement
Type Designator: CT75AM-12 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
tr ⓘ - Rise Time, typ: 265 nS
Coesⓘ - Output Capacitance, typ: 400 pF
Package: TO3PL
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CT75AM-12 Substitution
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CT75AM-12 datasheet
ct75am-12.pdf
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT75AM-12 GENERAL INVERTER UPS USE CT75AM-12 OUTLINE DRAWING Dimensions in mm 5 20MAX. 2 3.2 4 2 1 1 2 3 0.5 3 5.45 5.45 4.0 wr VCES ............................................................................... 600V q GATE q w COLLECTOR IC ................................................................................. See More ⇒
Specs: CT30TM-8, CT30VM-8, CT30VS-8, CT35SM-8, CT40TMH-8, CT60AM-18B, CT60AM-18F, CT60AM-20, IRGP4086, CY20AAJ-8, CY25AAJ-8, VBGN40N120, VBGN40N60, VBGN50N60, VBGT15N120, VBGT15N120P, VBGT15N135
Keywords - CT75AM-12 transistor spec
CT75AM-12 cross reference
CT75AM-12 equivalent finder
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History: VBGT15N120
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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