IXGH85N30C3 Specs and Replacement

Type Designator: IXGH85N30C3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 333 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.64 V @25℃

tr ⓘ - Rise Time, typ: 34 nS

Coesⓘ - Output Capacitance, typ: 310 pF

Package: TO247

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IXGH85N30C3 datasheet

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IXGH85N30C3

Preliminary Technical Information VCES = 300V IXGH85N30C3 GenX3TM 300V IGBT IC110 = 85A VCE(sat) 1.9V High Speed PT IGBTs for tfi typ = 70ns 50-150kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings (IXGH) VCES TJ = 25 C to 150 C 300 V VCGR TJ = 25 C to 150 C, RGE = 1M 300 V G VGES Continuous 20 V C (TAB) E VGEM Transient 30... See More ⇒

Specs: IXGH60N60C3D1, IXGH64N60A3, IXGH64N60B3, IXGH6N170, IXGH6N170A, IXGH72N60A3, IXGH72N60B3, IXGH72N60C3, TGPF30N43P, IXGH90N60B3, IXGI48N60C3, IXGJ40N60C2D1, IXGJ50N60B, IXGJ50N60C4D1, IXGK100N170, IXGK120N120A3, IXGK120N120B3

Keywords - IXGH85N30C3 transistor spec

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