All IGBT. IXGH85N30C3 Datasheet

 

IXGH85N30C3 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXGH85N30C3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 333 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.64 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 34 nS
   Coesⓘ - Output Capacitance, typ: 310 pF
   Qgⓘ - Total Gate Charge, typ: 136 nC
   Package: TO247

 IXGH85N30C3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGH85N30C3 Datasheet (PDF)

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 ixgh85n30c3.pdf

IXGH85N30C3 IXGH85N30C3

Preliminary Technical InformationVCES = 300VIXGH85N30C3GenX3TM 300V IGBTIC110 = 85A VCE(sat) 1.9V High Speed PT IGBTs fortfi typ = 70ns50-150kHz switchingTO-247 ADSymbol Test Conditions Maximum Ratings (IXGH)VCES TJ = 25C to 150C 300 VVCGR TJ = 25C to 150C, RGE = 1M 300 VGVGES Continuous 20 VC (TAB)EVGEM Transient 30

Datasheet: IXGH60N60C3D1 , IXGH64N60A3 , IXGH64N60B3 , IXGH6N170 , IXGH6N170A , IXGH72N60A3 , IXGH72N60B3 , IXGH72N60C3 , GT30J127 , IXGH90N60B3 , IXGI48N60C3 , IXGJ40N60C2D1 , IXGJ50N60B , IXGJ50N60C4D1 , IXGK100N170 , IXGK120N120A3 , IXGK120N120B3 .

 

 
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