All IGBT. IXGH90N60B3 Datasheet

 

IXGH90N60B3 Datasheet and Replacement


   Type Designator: IXGH90N60B3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 660 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 47 nS
   Coesⓘ - Output Capacitance, typ: 525 pF
   Qgⓘ - Total Gate Charge, typ: 172 nC
   Package: TO247
      - IGBT Cross-Reference

 

IXGH90N60B3 Datasheet (PDF)

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IXGH90N60B3

Preliminary Technical InformationVCES = 600VGenX3TM 600V IGBT IXGH90N60B3IC110 = 90AVCE(sat) 1.8VMedium speed low Vsat PT tfi(typ) = 148nsIGBTs 5-40 kHz switchingTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC

Datasheet: IXGH64N60A3 , IXGH64N60B3 , IXGH6N170 , IXGH6N170A , IXGH72N60A3 , IXGH72N60B3 , IXGH72N60C3 , IXGH85N30C3 , FGL60N100BNTD , IXGI48N60C3 , IXGJ40N60C2D1 , IXGJ50N60B , IXGJ50N60C4D1 , IXGK100N170 , IXGK120N120A3 , IXGK120N120B3 , IXGK120N60A3 .

History: MWI35-12T7T

Keywords - IXGH90N60B3 transistor datasheet

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