IXGH90N60B3 Specs and Replacement

Type Designator: IXGH90N60B3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 660 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

tr ⓘ - Rise Time, typ: 47 nS

Coesⓘ - Output Capacitance, typ: 525 pF

Package: TO247

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IXGH90N60B3 datasheet

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IXGH90N60B3

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGH90N60B3 IC110 = 90A VCE(sat) 1.8V Medium speed low Vsat PT tfi(typ) = 148ns IGBTs 5-40 kHz switching TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC... See More ⇒

Specs: IXGH64N60A3, IXGH64N60B3, IXGH6N170, IXGH6N170A, IXGH72N60A3, IXGH72N60B3, IXGH72N60C3, IXGH85N30C3, AOK40B65H2AL, IXGI48N60C3, IXGJ40N60C2D1, IXGJ50N60B, IXGJ50N60C4D1, IXGK100N170, IXGK120N120A3, IXGK120N120B3, IXGK120N60A3

Keywords - IXGH90N60B3 transistor spec

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