All IGBT. IXGL200N60B3 Datasheet

 

IXGL200N60B3 Datasheet and Replacement


   Type Designator: IXGL200N60B3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 83 nS
   Coesⓘ - Output Capacitance, typ: 1260 pF
   Qg ⓘ - Total Gate Charge, typ: 750 nC
   Package: TO264I
 

 IXGL200N60B3 substitution

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IXGL200N60B3 Datasheet (PDF)

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IXGL200N60B3

VCES = 600VGenX3TM 600V IGBTIXGL200N60B3IC110 = 90AMedium speed low Vsat PTVCE(sat) 1.50VIGBTs 5-40 kHz switchingtfi(typ) = 183nsSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C (limited by leads) 150 AIC110 TC = 110C (ch

Datasheet: IXGK60N60B2D1 , IXGK60N60C2D1 , IXGK64N60B3D1 , IXGK72N60A3H1 , IXGK72N60B3H1 , IXGK75N250 , IXGK82N120A3 , IXGK82N120B3 , GT30J124 , IXGL75N250 , IXGN100N170 , IXGN120N60A3 , IXGN120N60A3D1 , IXGN200N60A2 , IXGN200N60B3 , IXGN320N60A3 , IXGN400N30A3 .

History: TIG052TS | OST40N120HMF | IXGN200N60B3 | APT50GN60BG | SG50N06DS | F3L200R12W2H3_B11 | TGHP75N120FDR

Keywords - IXGL200N60B3 transistor datasheet

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