IXGL200N60B3 Specs and Replacement

Type Designator: IXGL200N60B3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 400 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃

tr ⓘ - Rise Time, typ: 83 nS

Coesⓘ - Output Capacitance, typ: 1260 pF

Package: TO264I

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IXGL200N60B3 datasheet

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IXGL200N60B3

VCES = 600V GenX3TM 600V IGBT IXGL200N60B3 IC110 = 90A Medium speed low Vsat PT VCE(sat) 1.50V IGBTs 5-40 kHz switching tfi(typ) = 183ns Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C (limited by leads) 150 A IC110 TC = 110 C (ch... See More ⇒

Specs: IXGK60N60B2D1, IXGK60N60C2D1, IXGK64N60B3D1, IXGK72N60A3H1, IXGK72N60B3H1, IXGK75N250, IXGK82N120A3, IXGK82N120B3, MBQ60T65PES, IXGL75N250, IXGN100N170, IXGN120N60A3, IXGN120N60A3D1, IXGN200N60A2, IXGN200N60B3, IXGN320N60A3, IXGN400N30A3

Keywords - IXGL200N60B3 transistor spec

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