All IGBT. IXGL75N250 Datasheet

 

IXGL75N250 Datasheet and Replacement


   Type Designator: IXGL75N250
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 430 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 110 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 225 nS
   Coesⓘ - Output Capacitance, typ: 345 pF
   Package: ISOPLUS-I5-PAK
      - IGBT Cross-Reference

 

IXGL75N250 Datasheet (PDF)

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IXGL75N250

Preliminary Technical InformationHigh Voltage IGBT VCES = 2500VIXGL75N250IC90 = 65AFor Capacitor Discharge VCE(sat) 2.9VApplications( Electrically Isolated Tab)ISOPLUS i5-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 2500 VVCES TJ = 25C to 150C, RGE = 1M 2500 VGVGES Continuous 20 VEC Isolated TabVGEM Transie

Datasheet: IXGK60N60C2D1 , IXGK64N60B3D1 , IXGK72N60A3H1 , IXGK72N60B3H1 , IXGK75N250 , IXGK82N120A3 , IXGK82N120B3 , IXGL200N60B3 , FGH40N60SFD , IXGN100N170 , IXGN120N60A3 , IXGN120N60A3D1 , IXGN200N60A2 , IXGN200N60B3 , IXGN320N60A3 , IXGN400N30A3 , IXGN400N60A3 .

History: IXGL200N60B3 | IXGN200N60B3 | DG40F12T2 | IGW30N60H3 | MGP4N60E | IXDH35N60BD1 | IXGT32N60BD1

Keywords - IXGL75N250 transistor datasheet

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