All IGBT. IXGL75N250 Datasheet

 

IXGL75N250 Datasheet and Replacement


   Type Designator: IXGL75N250
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 430 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 110 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 225 nS
   Coesⓘ - Output Capacitance, typ: 345 pF
   Qg ⓘ - Total Gate Charge, typ: 410 nC
   Package: ISOPLUS-I5-PAK
 

 IXGL75N250 substitution

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IXGL75N250 Datasheet (PDF)

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IXGL75N250

Preliminary Technical InformationHigh Voltage IGBT VCES = 2500VIXGL75N250IC90 = 65AFor Capacitor Discharge VCE(sat) 2.9VApplications( Electrically Isolated Tab)ISOPLUS i5-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 2500 VVCES TJ = 25C to 150C, RGE = 1M 2500 VGVGES Continuous 20 VEC Isolated TabVGEM Transie

Datasheet: IXGK60N60C2D1 , IXGK64N60B3D1 , IXGK72N60A3H1 , IXGK72N60B3H1 , IXGK75N250 , IXGK82N120A3 , IXGK82N120B3 , IXGL200N60B3 , GT50JR22 , IXGN100N170 , IXGN120N60A3 , IXGN120N60A3D1 , IXGN200N60A2 , IXGN200N60B3 , IXGN320N60A3 , IXGN400N30A3 , IXGN400N60A3 .

History: IXER60N120 | NGTB40N120S | IXGN200N60B3 | TIG052TS | MIXA40W1200TED | F3L200R12W2H3_B11 | IXGL200N60B3

Keywords - IXGL75N250 transistor datasheet

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