IXGL75N250 Specs and Replacement

Type Designator: IXGL75N250

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 430 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 110 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 225 nS

Coesⓘ - Output Capacitance, typ: 345 pF

Package: ISOPLUS-I5-PAK

 IXGL75N250 Substitution

- IGBTⓘ Cross-Reference Search

 

IXGL75N250 datasheet

 ..1. Size:170K  ixys
 ixgl75n250.pdf pdf_icon

IXGL75N250

Preliminary Technical Information High Voltage IGBT VCES = 2500V IXGL75N250 IC90 = 65A For Capacitor Discharge VCE(sat) 2.9V Applications ( Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 2500 V VCES TJ = 25 C to 150 C, RGE = 1M 2500 V G VGES Continuous 20 V E C Isolated Tab VGEM Transie... See More ⇒

Specs: IXGK60N60C2D1, IXGK64N60B3D1, IXGK72N60A3H1, IXGK72N60B3H1, IXGK75N250, IXGK82N120A3, IXGK82N120B3, IXGL200N60B3, FGH40N60SFD, IXGN100N170, IXGN120N60A3, IXGN120N60A3D1, IXGN200N60A2, IXGN200N60B3, IXGN320N60A3, IXGN400N30A3, IXGN400N60A3

Keywords - IXGL75N250 transistor spec

 IXGL75N250 cross reference
 IXGL75N250 equivalent finder
 IXGL75N250 lookup
 IXGL75N250 substitution
 IXGL75N250 replacement