All IGBT. VBGT25N135 Datasheet

 

VBGT25N135 Datasheet and Replacement


   Type Designator: VBGT25N135
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 110 pF
   Package: TO3PN
      - IGBT Cross-Reference

 

VBGT25N135 Datasheet (PDF)

 ..1. Size:1513K  cn vbsemi
 vbgt25n135.pdf pdf_icon

VBGT25N135

VBGT25N135www.VBsemi.comGeneral Description VBsemi Field Stop Trench IGBTs offer low switching losses, high energyefficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorSoft current turn-off waveformsExtremely enhanced avala

Datasheet: CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 , VBGN40N60 , VBGN50N60 , VBGT15N120 , VBGT15N120P , VBGT15N135 , IKW30N60H3 , VBGT30N135 , DG10X06T1 , DG10X12T2 , DG120X07T2 , DG15X06T1 , DG15X12T2 , DG20X06T2 , DG30X07T2 .

History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL

Keywords - VBGT25N135 transistor datasheet

 VBGT25N135 cross reference
 VBGT25N135 equivalent finder
 VBGT25N135 lookup
 VBGT25N135 substitution
 VBGT25N135 replacement

 

 
Back to Top

 


 
.