All IGBT. VBGT25N135 Datasheet

 

VBGT25N135 Datasheet and Replacement


   Type Designator: VBGT25N135
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 110 pF
   Qg ⓘ - Total Gate Charge, typ: 280 nC
   Package: TO3PN
 

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VBGT25N135 Datasheet (PDF)

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VBGT25N135

VBGT25N135www.VBsemi.comGeneral Description VBsemi Field Stop Trench IGBTs offer low switching losses, high energyefficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorSoft current turn-off waveformsExtremely enhanced avala

Datasheet: CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 , VBGN40N60 , VBGN50N60 , VBGT15N120 , VBGT15N120P , VBGT15N135 , IRGP4066D , VBGT30N135 , DG10X06T1 , DG10X12T2 , DG120X07T2 , DG15X06T1 , DG15X12T2 , DG20X06T2 , DG30X07T2 .

History: MMG200D120UA6TN

Keywords - VBGT25N135 transistor datasheet

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