IXGN320N60A3 Specs and Replacement

Type Designator: IXGN320N60A3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 735 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 320 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.05 V @25℃

tr ⓘ - Rise Time, typ: 68 nS

Coesⓘ - Output Capacitance, typ: 985 pF

Package: SOT227B

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IXGN320N60A3 datasheet

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IXGN320N60A3

VCES = 600V IXGN320N60A3 GenX3TM 600V IGBT IC25 = 320A VCE(sat) 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC Symbol Test Conditions Maximum Ratings E153432 VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C (Chip Capability) 320 A... See More ⇒

Specs: IXGK82N120B3, IXGL200N60B3, IXGL75N250, IXGN100N170, IXGN120N60A3, IXGN120N60A3D1, IXGN200N60A2, IXGN200N60B3, IXGH60N60, IXGN400N30A3, IXGN400N60A3, IXGN400N60B3, IXGN50N120C3H1, IXGN60N60C2, IXGN60N60C2D1, IXGN72N60A3, IXGN72N60C3H1

Keywords - IXGN320N60A3 transistor spec

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