All IGBT. IXGN320N60A3 Datasheet

 

IXGN320N60A3 Datasheet and Replacement


   Type Designator: IXGN320N60A3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 735 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 320 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.05 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 68 nS
   Coesⓘ - Output Capacitance, typ: 985 pF
   Qgⓘ - Total Gate Charge, typ: 560 nC
   Package: SOT227B
      - IGBT Cross-Reference

 

IXGN320N60A3 Datasheet (PDF)

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IXGN320N60A3

VCES = 600VIXGN320N60A3GenX3TM 600V IGBTIC25 = 320AVCE(sat) 1.25VUltra-Low-Vsat PT IGBT forup to 5kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 600 VE VCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C (Chip Capability) 320 A

Datasheet: IXGK82N120B3 , IXGL200N60B3 , IXGL75N250 , IXGN100N170 , IXGN120N60A3 , IXGN120N60A3D1 , IXGN200N60A2 , IXGN200N60B3 , SGT50T65FD1PT , IXGN400N30A3 , IXGN400N60A3 , IXGN400N60B3 , IXGN50N120C3H1 , IXGN60N60C2 , IXGN60N60C2D1 , IXGN72N60A3 , IXGN72N60C3H1 .

History: IXSP20N60B2

Keywords - IXGN320N60A3 transistor datasheet

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 IXGN320N60A3 equivalent finder
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