IXGN60N60C2D1 IGBT. Datasheet pdf. Equivalent
Type Designator: IXGN60N60C2D1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 480 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 530 pF
Qgⓘ - Total Gate Charge, typ: 146 nC
Package: SOT227B
IXGN60N60C2D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXGN60N60C2D1 Datasheet (PDF)
ixgn60n60c2d1.pdf
HiPerFASTTM IGBTs VCES = 600VIXGN60N60C2with DiodeIC110 = 60AIXGN60N60C2D1VCE(sat) 2.5Vtrr = 35nsC2-Class High Speed IGBTsEE SOT-227B, miniBLOC E15343260C2 60C2D1E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1 M 600 VE VGES Continuous 20 VCVGEM Transient 30 VIC25 TC
ixgn60n60c2.pdf
HiPerFASTTM IGBTs VCES = 600VIXGN60N60C2with DiodeIC110 = 60AIXGN60N60C2D1VCE(sat) 2.5Vtrr = 35nsC2-Class High Speed IGBTsEE SOT-227B, miniBLOC E15343260C2 60C2D1E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1 M 600 VE VGES Continuous 20 VCVGEM Transient 30 VIC25 TC
ixgn60n60.pdf
Ultra-Low VCE(sat) IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 VPreliminary data sheetESymbol Test Conditions Maximum RatingsSOT-227B miniBLOCE VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C 100 ACIC90 TC = 90C60 A G = Gate, C = Collector, E = EmitterICM TC
Datasheet: IXGN200N60A2 , IXGN200N60B3 , IXGN320N60A3 , IXGN400N30A3 , IXGN400N60A3 , IXGN400N60B3 , IXGN50N120C3H1 , IXGN60N60C2 , RJP30H1DPD , IXGN72N60A3 , IXGN72N60C3H1 , IXGN82N120B3H1 , IXGN82N120C3H1 , IXGP12N120A2 , IXGP12N120A3 , IXGP12N60B , IXGP14N120B .
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