IXGN72N60C3H1 Specs and Replacement

Type Designator: IXGN72N60C3H1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 360 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 78 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 37 nS

Coesⓘ - Output Capacitance, typ: 330 pF

Package: SOT227B

 IXGN72N60C3H1 Substitution

- IGBTⓘ Cross-Reference Search

 

IXGN72N60C3H1 datasheet

 ..1. Size:221K  ixys
 ixgn72n60c3h1.pdf pdf_icon

IXGN72N60C3H1

GenX3TM 600V IGBT VCES = 600V IXGN72N60C3H1 with Diode IC110 = 52A VCE(sat) 2.50V tfi(typ) = 55ns High-Speed Low-Vsat PT IGBTs 40-100 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC ... See More ⇒

 5.1. Size:182K  ixys
 ixgn72n60a3.pdf pdf_icon

IXGN72N60C3H1

Preliminary Technical Information VCES = 600V IXGN72N60A3 GenX3TM 600V IGBT IC110 = 68A VCE(sat) 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching E SOT-227B, miniBLOC Symbol Test Conditions Maximum Ratings E153432 VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V VGEM Transient 30 V IC25 TC ... See More ⇒

Specs: IXGN320N60A3, IXGN400N30A3, IXGN400N60A3, IXGN400N60B3, IXGN50N120C3H1, IXGN60N60C2, IXGN60N60C2D1, IXGN72N60A3, CRG60T60AN3H, IXGN82N120B3H1, IXGN82N120C3H1, IXGP12N120A2, IXGP12N120A3, IXGP12N60B, IXGP14N120B, IXGP15N120B2, IXGP15N120C

Keywords - IXGN72N60C3H1 transistor spec

 IXGN72N60C3H1 cross reference
 IXGN72N60C3H1 equivalent finder
 IXGN72N60C3H1 lookup
 IXGN72N60C3H1 substitution
 IXGN72N60C3H1 replacement