All IGBT. IXGN72N60C3H1 Datasheet

 

IXGN72N60C3H1 Datasheet and Replacement


   Type Designator: IXGN72N60C3H1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 360 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 78 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 37 nS
   Coesⓘ - Output Capacitance, typ: 330 pF
   Qgⓘ - Total Gate Charge, typ: 174 nC
   Package: SOT227B
      - IGBT Cross-Reference

 

IXGN72N60C3H1 Datasheet (PDF)

 ..1. Size:221K  ixys
 ixgn72n60c3h1.pdf pdf_icon

IXGN72N60C3H1

GenX3TM 600V IGBT VCES = 600VIXGN72N60C3H1with Diode IC110 = 52AVCE(sat) 2.50Vtfi(typ) = 55nsHigh-Speed Low-Vsat PTIGBTs 40-100 kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC

 5.1. Size:182K  ixys
 ixgn72n60a3.pdf pdf_icon

IXGN72N60C3H1

Preliminary Technical InformationVCES = 600VIXGN72N60A3GenX3TM 600V IGBTIC110 = 68AVCE(sat) 1.35VUltra Low Vsat PT IGBT forup to 5kHz switchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 600 VE VCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VVGEM Transient 30 VIC25 TC

Datasheet: IXGN320N60A3 , IXGN400N30A3 , IXGN400N60A3 , IXGN400N60B3 , IXGN50N120C3H1 , IXGN60N60C2 , IXGN60N60C2D1 , IXGN72N60A3 , FGA25N120ANTD , IXGN82N120B3H1 , IXGN82N120C3H1 , IXGP12N120A2 , IXGP12N120A3 , IXGP12N60B , IXGP14N120B , IXGP15N120B2 , IXGP15N120C .

History: IXGH32N60AU1S | IXGT15N120BD1 | STGB30H60DF | 1MBI400HH-120L-50 | GT8N101 | IRGPS46160D

Keywords - IXGN72N60C3H1 transistor datasheet

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 IXGN72N60C3H1 replacement

 

 
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