All IGBT. VBGT30N135 Datasheet

 

VBGT30N135 IGBT. Datasheet pdf. Equivalent


   Type Designator: VBGT30N135
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 278 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 120 pF
   Qgⓘ - Total Gate Charge, typ: 400 nC
   Package: TO3PN

 VBGT30N135 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

VBGT30N135 Datasheet (PDF)

 ..1. Size:1517K  cn vbsemi
 vbgt30n135.pdf

VBGT30N135 VBGT30N135

VBGT30N135www.VBsemi.comGeneral Description VBsemi Field Stop Trench IGBTs offer low switching losses, high energyefficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorSoft current turn-off waveformsExtremely enhanced avala

Datasheet: CY25AAJ-8 , VBGN40N120 , VBGN40N60 , VBGN50N60 , VBGT15N120 , VBGT15N120P , VBGT15N135 , VBGT25N135 , IKW50N60H3 , DG10X06T1 , DG10X12T2 , DG120X07T2 , DG15X06T1 , DG15X12T2 , DG20X06T2 , DG30X07T2 , HGTG12N60D1D .

 

 
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