All IGBT. SL75T120FZ Datasheet

 

SL75T120FZ Datasheet and Replacement


   Type Designator: SL75T120FZ
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 115 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 470 nS
   Coesⓘ - Output Capacitance, typ: 312 pF
   Qg ⓘ - Total Gate Charge, typ: 270 nC
   Package: TO264
 

 SL75T120FZ substitution

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SL75T120FZ Datasheet (PDF)

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SL75T120FZ

SL75T120FZFeatures V = 1.85V@V = 15V,I = 75ACE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveformsApplications UPS AC & DC motor controls general purpose inverter .Absolute Ratings(Tc=25)Parameter Symbol Value UnitCollector-Emmiter Voltage V 1200 VceI 115 ACCollector Current-continuous T=25T

Datasheet: IXGP48N60B3 , IXGP48N60C3 , IXGP4N100 , IXGP50N60B4 , IXGP50N60C4 , IXGP7N60BD1 , IXGP7N60CD1 , IXGQ20N120B , TGD30N40P , IXGQ50N60B4D1 , IXGQ50N60C4D1 , IXGR120N60B , IXGR120N60C2 , IXGR12N60C , IXGR16N170AH1 , IXGR24N120C3D1 , IXGR24N60C .

History: IXXH75N60B3D1 | AOGF60B65H2AL

Keywords - SL75T120FZ transistor datasheet

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