IXGR24N120C3D1 Specs and Replacement

Type Designator: IXGR24N120C3D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 48 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.6 V @25℃

tr ⓘ - Rise Time, typ: 26 nS

Coesⓘ - Output Capacitance, typ: 179 pF

Package: ISOPLUS247

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IXGR24N120C3D1 datasheet

 ..1. Size:160K  ixys
 ixgr24n120c3d1.pdf pdf_icon

IXGR24N120C3D1

Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGR24N120C3D1 IC25 = 48A VCE(sat) 4.2V High speed PT IGBTs for tfi(typ) = 110ns 20-50kHz Switching ISOPLUS 247TM (IXGR) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G C IC25... See More ⇒

 7.1. Size:54K  ixys
 ixgr24n60c.pdf pdf_icon

IXGR24N120C3D1

VCES = 600 V IXGR 24N60C HiPerFASTTM IGBT IC25 = 42 A ISOPLUS247TM VCE(sat) = 2.5 V (Electrically Isolated Back Surface) tfi(typ) = 60 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G C E Isolated Backside* IC25 TC = ... See More ⇒

Specs: IXGQ20N120B, SL75T120FZ, IXGQ50N60B4D1, IXGQ50N60C4D1, IXGR120N60B, IXGR120N60C2, IXGR12N60C, IXGR16N170AH1, IHW40T60, IXGR24N60C, IXGR32N170AH1, IXGR32N170H1, IXGR32N90B2D1, IXGR35N120B, IXGR35N120BD1, IXGR35N120C, IXGR39N60B

Keywords - IXGR24N120C3D1 transistor spec

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