All IGBT. IXGR24N120C3D1 Datasheet

 

IXGR24N120C3D1 Datasheet and Replacement


   Type Designator: IXGR24N120C3D1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 48 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 26 nS
   Coesⓘ - Output Capacitance, typ: 179 pF
   Package: ISOPLUS247
      - IGBT Cross-Reference

 

IXGR24N120C3D1 Datasheet (PDF)

 ..1. Size:160K  ixys
 ixgr24n120c3d1.pdf pdf_icon

IXGR24N120C3D1

Preliminary Technical InformationVCES = 1200VGenX3TM 1200V IGBT IXGR24N120C3D1IC25 = 48AVCE(sat) 4.2VHigh speed PT IGBTs fortfi(typ) = 110ns20-50kHz SwitchingISOPLUS 247TM (IXGR)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VGCIC25

 7.1. Size:54K  ixys
 ixgr24n60c.pdf pdf_icon

IXGR24N120C3D1

VCES = 600 VIXGR 24N60CHiPerFASTTM IGBTIC25 = 42 AISOPLUS247TMVCE(sat) = 2.5 V(Electrically Isolated Back Surface)tfi(typ) = 60 nsPreliminary data sheetSymbol Test Conditions Maximum RatingsISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Backside*IC25 TC =

Datasheet: IXGQ20N120B , SL75T120FZ , IXGQ50N60B4D1 , IXGQ50N60C4D1 , IXGR120N60B , IXGR120N60C2 , IXGR12N60C , IXGR16N170AH1 , GT30G122 , IXGR24N60C , IXGR32N170AH1 , IXGR32N170H1 , IXGR32N90B2D1 , IXGR35N120B , IXGR35N120BD1 , IXGR35N120C , IXGR39N60B .

History: IXGN100N170 | IXGL75N250 | DG40F12T2 | IXGN200N60B3 | IXGL200N60B3 | IXDH35N60BD1 | IXGT32N60BD1

Keywords - IXGR24N120C3D1 transistor datasheet

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