IXGT30N60B Specs and Replacement

Type Designator: IXGT30N60B

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3(max) V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 210 pF

Package: TO268

 IXGT30N60B Substitution

- IGBTⓘ Cross-Reference Search

 

IXGT30N60B datasheet

 ..1. Size:125K  ixys
 ixgt30n60b.pdf pdf_icon

IXGT30N60B

IXGH 32N60B HiPerFASTTM IGBT VCES = 600 V IXGT 32N60B IC25 = 60 A IXGH 32N60BD1 VCE(sat) = 2.3 V IXGT 32N60BD1 tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) G VCES TJ = 25 C to 150 C 600 V E C VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) VGES Continuous 20 V TO-247 AD VGEM Transient 30 V (IXGH) IC25 TC = 25 C60 A IC90 TC = 90 C3... See More ⇒

 0.1. Size:576K  ixys
 ixgt30n60b2.pdf pdf_icon

IXGT30N60B

Advance Technical Data VCES = 600 V IXGH 30N60B2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60B2 VCE(sat) ... See More ⇒

 0.2. Size:578K  ixys
 ixgh30n60b2 ixgt30n60b2.pdf pdf_icon

IXGT30N60B

Advance Technical Data VCES = 600 V IXGH 30N60B2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60B2 VCE(sat) ... See More ⇒

 0.3. Size:506K  ixys
 ixgt30n60b2d1.pdf pdf_icon

IXGT30N60B

Advance Technical Data VCES = 600 V HiPerFASTTM IGBT IXGH 30N60B2D1 IC25 = 70 A IXGT 30N60B2D1 VCE(sat) ... See More ⇒

SHOW MORE

Specs: IXGT24N170AH1, IXGT25N160, IXGT25N250, IXGT28N120B, IXGT28N120BD1, IXGT28N60BD1, IXGT2N250, IXGT30N120B3D1, G50T65D, IXGT30N60B2, IXGT30N60B2D1, IXGT30N60C2, IXGT30N60C2D1, IXGT30N60C3D1, IXGT32N100A3, IXGT32N120A3, IXGT32N170

Keywords - IXGT30N60B transistor spec

 IXGT30N60B cross reference
 IXGT30N60B equivalent finder
 IXGT30N60B lookup
 IXGT30N60B substitution
 IXGT30N60B replacement