All IGBT. IXGT30N60B2D1 Datasheet

 

IXGT30N60B2D1 Datasheet and Replacement


   Type Designator: IXGT30N60B2D1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 190 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8(max) V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 145 pF
   Package: TO268
      - IGBT Cross-Reference

 

IXGT30N60B2D1 Datasheet (PDF)

 ..1. Size:506K  ixys
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IXGT30N60B2D1

Advance Technical DataVCES = 600 VHiPerFASTTM IGBT IXGH 30N60B2D1IC25 = 70 AIXGT 30N60B2D1VCE(sat)

 ..2. Size:600K  ixys
ixgh30n60b2d1 ixgt30n60b2d1.pdf pdf_icon

IXGT30N60B2D1

Advance Technical DataVCES = 600 VHiPerFASTTM IGBT IXGH 30N60B2D1IC25 = 70 AIXGT 30N60B2D1VCE(sat)

 3.1. Size:576K  ixys
ixgt30n60b2.pdf pdf_icon

IXGT30N60B2D1

Advance Technical DataVCES = 600 VIXGH 30N60B2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60B2VCE(sat)

 3.2. Size:578K  ixys
ixgh30n60b2 ixgt30n60b2.pdf pdf_icon

IXGT30N60B2D1

Advance Technical DataVCES = 600 VIXGH 30N60B2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60B2VCE(sat)

Datasheet: IXGT25N250 , IXGT28N120B , IXGT28N120BD1 , IXGT28N60BD1 , IXGT2N250 , IXGT30N120B3D1 , IXGT30N60B , IXGT30N60B2 , GT45F122 , IXGT30N60C2 , IXGT30N60C2D1 , IXGT30N60C3D1 , IXGT32N100A3 , IXGT32N120A3 , IXGT32N170 , IXGT32N170A , IXGT32N60C .

History: IXGT20N120B | APT40GP60BG

Keywords - IXGT30N60B2D1 transistor datasheet

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 IXGT30N60B2D1 equivalent finder
 IXGT30N60B2D1 lookup
 IXGT30N60B2D1 substitution
 IXGT30N60B2D1 replacement

 

 
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