IXGT30N60B2D1 Specs and Replacement

Type Designator: IXGT30N60B2D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 190 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 70 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8(max) V @25℃

tr ⓘ - Rise Time, typ: 15 nS

Coesⓘ - Output Capacitance, typ: 145 pF

Package: TO268

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IXGT30N60B2D1 datasheet

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IXGT30N60B2D1

Advance Technical Data VCES = 600 V HiPerFASTTM IGBT IXGH 30N60B2D1 IC25 = 70 A IXGT 30N60B2D1 VCE(sat) ... See More ⇒

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IXGT30N60B2D1

Advance Technical Data VCES = 600 V HiPerFASTTM IGBT IXGH 30N60B2D1 IC25 = 70 A IXGT 30N60B2D1 VCE(sat) ... See More ⇒

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IXGT30N60B2D1

Advance Technical Data VCES = 600 V IXGH 30N60B2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60B2 VCE(sat) ... See More ⇒

 3.2. Size:578K  ixys
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IXGT30N60B2D1

Advance Technical Data VCES = 600 V IXGH 30N60B2 HiPerFASTTM IGBT IC25 = 70 A IXGT 30N60B2 VCE(sat) ... See More ⇒

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Specs: IXGT25N250, IXGT28N120B, IXGT28N120BD1, IXGT28N60BD1, IXGT2N250, IXGT30N120B3D1, IXGT30N60B, IXGT30N60B2, MBQ50T65FDSC, IXGT30N60C2, IXGT30N60C2D1, IXGT30N60C3D1, IXGT32N100A3, IXGT32N120A3, IXGT32N170, IXGT32N170A, IXGT32N60C

Keywords - IXGT30N60B2D1 transistor spec

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