All IGBT. IXGV25N250S Datasheet

 

IXGV25N250S Datasheet and Replacement


   Type Designator: IXGV25N250S
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9(max) V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 233 nS
   Coesⓘ - Output Capacitance, typ: 75 pF
   Package: PLUS220SMD
      - IGBT Cross-Reference

 

IXGV25N250S Datasheet (PDF)

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IXGV25N250S

Preliminary Technical InformationIXGH25N250 VCES = 2500 VHigh Voltage IGBTIXGT25N250 IC25 = 60 AFor Capacitor DischargeApplications IXGV25N250S VCE(sat) 2.9 VTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 2500 V CC (TAB)EVCGR TJ = 25C to 150C; RGE = 1 M 2500 VVGES Continuous 20 VTO-268 (IXGT)VGEM Transi

Datasheet: IXGT60N60C2 , IXGT60N60C3D1 , IXGT64N60A3 , IXGT64N60B3 , IXGT6N170 , IXGT6N170A , IXGT72N60A3 , IXGT72N60B3 , STGW60V60DF , IXGX100N170 , IXGX120N120A3 , IXGX120N120B3 , IXGX120N60A3 , IXGX120N60B3 , IXGX120N60C2 , IXGX12N90C , IXGX28N140B3H1 .

History: IXGX100N170 | IKQ100N60T | MUBW50-06A8 | IXGK120N120B3 | IXGX12N90C | IXGP12N100AU1 | IXGH17N100U1

Keywords - IXGV25N250S transistor datasheet

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