All IGBT. IXRH40N120 Datasheet

 

IXRH40N120 Datasheet and Replacement


   Type Designator: IXRH40N120
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 55 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 54 nS
   Qg ⓘ - Total Gate Charge, typ: 90 nC
   Package: TO247
 

 IXRH40N120 substitution

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IXRH40N120 Datasheet (PDF)

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IXRH40N120

IXRH 40N120VCES = 1200 VIGBT with ReverseIC25 = 55 ABlocking capabilityVCE(sat)= 2.3 V typ.CTO-247 ADGCGC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorFeatures IGBT IGBT with NPT (non punch through)structureSymbol Conditions Maximum Ratings reverse blocking capabilityVCES TVJ = 25C to 150C 1200 V- function of series dio

Datasheet: IXGX72N60C3H1 , IXGX75N250 , IXGX82N120A3 , IXGX82N120B3 , IXGY2N120 , IXLF19N250A , IXRA15N120 , STGWT40HP65FB , FGPF4536 , IXRP15N120 , IXSA10N60B2D1 , IXSA15N120B , IXSA20N60B2D1 , IXSH10N60B2D1 , IXSH15N120BD1 , IXSH20N60B2D1 , IXSH24N60B .

Keywords - IXRH40N120 transistor datasheet

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