IXRH40N120 Specs and Replacement
Type Designator: IXRH40N120
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 55 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
Package: TO247
IXRH40N120 Substitution - IGBT ⓘ Cross-Reference Search
IXRH40N120 datasheet
ixrh40n120.pdf
IXRH 40N120 VCES = 1200 V IGBT with Reverse IC25 = 55 A Blocking capability VCE(sat)= 2.3 V typ. C TO-247 AD G C G C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Features IGBT IGBT with NPT (non punch through) structure Symbol Conditions Maximum Ratings reverse blocking capability VCES TVJ = 25 C to 150 C 1200 V - function of series dio... See More ⇒
Specs: IXGX72N60C3H1 , IXGX75N250 , IXGX82N120A3 , IXGX82N120B3 , IXGY2N120 , IXLF19N250A , IXRA15N120 , STGWT40HP65FB , FGPF4536 , IXRP15N120 , IXSA10N60B2D1 , IXSA15N120B , IXSA20N60B2D1 , IXSH10N60B2D1 , IXSH15N120BD1 , IXSH20N60B2D1 , IXSH24N60B .
Keywords - IXRH40N120 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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