IXRH40N120 Datasheet. Specs and Replacement

Type Designator: IXRH40N120  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 55 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃

tr ⓘ - Rise Time, typ: 54 nS

Package: TO247

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IXRH40N120 datasheet

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IXRH40N120

IXRH 40N120 VCES = 1200 V IGBT with Reverse IC25 = 55 A Blocking capability VCE(sat)= 2.3 V typ. C TO-247 AD G C G C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Features IGBT IGBT with NPT (non punch through) structure Symbol Conditions Maximum Ratings reverse blocking capability VCES TVJ = 25 C to 150 C 1200 V - function of series dio... See More ⇒

Specs: IXGX72N60C3H1, IXGX75N250, IXGX82N120A3, IXGX82N120B3, IXGY2N120, IXLF19N250A, IXRA15N120, STGWT40HP65FB, IXGH60N60, IXRP15N120, IXSA10N60B2D1, IXSA15N120B, IXSA20N60B2D1, IXSH10N60B2D1, IXSH15N120BD1, IXSH20N60B2D1, IXSH24N60B

Keywords - IXRH40N120 transistor spec

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