All IGBT. IXSA20N60B2D1 Datasheet

 

IXSA20N60B2D1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXSA20N60B2D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 190 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 35 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 90 pF
   Qgⓘ - Total Gate Charge, typ: 33 nC
   Package: TO263

 IXSA20N60B2D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXSA20N60B2D1 Datasheet (PDF)

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 ixsa20n60b2d1.pdf

IXSA20N60B2D1 IXSA20N60B2D1

IXSA 20N60B2D1VCES = 600 VHigh Speed IGBTIXSP 20N60B2D1IC25 = 35 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-220 (IXSP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C35 AIC110 TC = 110C20 ATO-22

Datasheet: IXGY2N120 , IXLF19N250A , IXRA15N120 , STGWT40HP65FB , IXRH40N120 , IXRP15N120 , IXSA10N60B2D1 , IXSA15N120B , RJP30E2DPP-M0 , IXSH10N60B2D1 , IXSH15N120BD1 , IXSH20N60B2D1 , IXSH24N60B , IXSH24N60BD1 , IXSH30N60B2D1 , IXSH35N120B , SIG20N60P1A .

 

 
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