IXSA20N60B2D1 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXSA20N60B2D1 Specs and Replacement

Type Designator: IXSA20N60B2D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 190 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 35 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 90 pF

Package: TO263

IXSA20N60B2D1 Substitution

- IGBT ⓘ Cross-Reference Search

IXSA20N60B2D1 datasheet

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IXSA 20N60B2D1 VCES = 600 V High Speed IGBT IXSP 20N60B2D1 IC25 = 35 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXSP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C35 A IC110 TC = 110 C20 A TO-22... See More ⇒

Specs: IXGY2N120 , IXLF19N250A , IXRA15N120 , STGWT40HP65FB , IXRH40N120 , IXRP15N120 , IXSA10N60B2D1 , IXSA15N120B , SGT50T65FD1PT , IXSH10N60B2D1 , IXSH15N120BD1 , IXSH20N60B2D1 , IXSH24N60B , IXSH24N60BD1 , IXSH30N60B2D1 , IXSH35N120B , SIG20N60P1A .