All IGBT. IXSR35N120BD1 Datasheet

 

IXSR35N120BD1 Datasheet and Replacement


   Type Designator: IXSR35N120BD1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.6(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 315 pF
   Qgⓘ - Total Gate Charge, typ: 120 nC
   Package: ISOPLUS247
      - IGBT Cross-Reference

 

IXSR35N120BD1 Datasheet (PDF)

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IXSR35N120BD1

IXSR 35N120BD1IGBT with Diode VCES = 1200 VIC25 = 70 AISOPLUS 247TMVCE(sat) = 3.6 V(Electrically Isolated Backside)tfi(typ) = 180 nsShort Circuit SOA CapabilitySymbol Test Conditions Maximum RatingsISOPLUS 247TMVCES TJ = 25C to 150C 1200 VE 153432VCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C70 AGC

Datasheet: IXSN80N60BD1 , IXSP10N60B2D1 , IXSP15N120B , IXSP20N60B2 , IXSP20N60B2D1 , IXSP24N60B , IXSQ10N60B2D1 , SIW120N65G2P2D , IRG7R313U , IXSR40N60BD1 , IXSR40N60CD1 , IXST15N120BD1 , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , IXST35N120B , SIW100N65G2P2D .

History: SIG30N60P | MKI50-06A7

Keywords - IXSR35N120BD1 transistor datasheet

 IXSR35N120BD1 cross reference
 IXSR35N120BD1 equivalent finder
 IXSR35N120BD1 lookup
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