IXSR35N120BD1 PDF and Equivalents Search

 

IXSR35N120BD1 Specs and Replacement

Type Designator: IXSR35N120BD1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 70 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.6(max) V @25℃

tr ⓘ - Rise Time, typ: 27 nS

Coesⓘ - Output Capacitance, typ: 315 pF

Package: ISOPLUS247

 IXSR35N120BD1 Substitution

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IXSR35N120BD1 datasheet

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 ixsr35n120bd1.pdf pdf_icon

IXSR35N120BD1

IXSR 35N120BD1 IGBT with Diode VCES = 1200 V IC25 = 70 A ISOPLUS 247TM VCE(sat) = 3.6 V (Electrically Isolated Backside) tfi(typ) = 180 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VCES TJ = 25 C to 150 C 1200 V E 153432 VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C70 A G C ... See More ⇒

Specs: IXSN80N60BD1 , IXSP10N60B2D1 , IXSP15N120B , IXSP20N60B2 , IXSP20N60B2D1 , IXSP24N60B , IXSQ10N60B2D1 , SIW120N65G2P2D , IRG7R313U , IXSR40N60BD1 , IXSR40N60CD1 , IXST15N120BD1 , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , IXST35N120B , SIW100N65G2P2D .

History: ISL9V5045S3ST-F085 | HIA30N140IH-DA

Keywords - IXSR35N120BD1 transistor spec

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