IXSR40N60BD1 Specs and Replacement
Type Designator: IXSR40N60BD1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 170 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 70 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2(max) V @25℃
tr ⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 440 pF
Package: ISOPLUS247
IXSR40N60BD1 Substitution - IGBT ⓘ Cross-Reference Search
IXSR40N60BD1 datasheet
ixsr40n60bd1.pdf
IXSR 40N60BD1 IGBT with Diode VCES = 600 V IC25 = 70 A ISOPLUS 247TM VCE(sat) = 2.2 V (Electrically Isolated Backside) tfi(typ) = 120 ns Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VCES TJ = 25 C to 150 C 600 V E 153432 VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC... See More ⇒
ixsr40n60cd1.pdf
IXSR 40N60CD1 VCES = 600 V IGBT with Diode IC25 = 62 A ISOPLUS247TM VCE(SAT) = 2.5 V (Electrically Isolated Backside) tfi(typ) = 70 ns Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXSR) E 153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V G VGEM Transient 30 V C E I... See More ⇒
Specs: IXSP10N60B2D1 , IXSP15N120B , IXSP20N60B2 , IXSP20N60B2D1 , IXSP24N60B , IXSQ10N60B2D1 , SIW120N65G2P2D , IXSR35N120BD1 , GT30G124 , IXSR40N60CD1 , IXST15N120BD1 , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , IXST35N120B , SIW100N65G2P2D , IXST45N120B .
Keywords - IXSR40N60BD1 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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