All IGBT. IXSR40N60BD1 Datasheet

 

IXSR40N60BD1 Datasheet and Replacement


   Type Designator: IXSR40N60BD1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 170 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 440 pF
   Qgⓘ - Total Gate Charge, typ: 190 nC
   Package: ISOPLUS247
      - IGBT Cross-Reference

 

IXSR40N60BD1 Datasheet (PDF)

 ..1. Size:71K  ixys
 ixsr40n60bd1.pdf pdf_icon

IXSR40N60BD1

IXSR 40N60BD1IGBT with Diode VCES = 600 VIC25 = 70 AISOPLUS 247TMVCE(sat) = 2.2 V(Electrically Isolated Backside)tfi(typ) = 120 nsShort Circuit SOA CapabilityPreliminary Data SheetSymbol Test Conditions Maximum RatingsISOPLUS 247TMVCES TJ = 25C to 150C 600 VE 153432VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VIC25 TC

 5.1. Size:38K  ixys
 ixsr40n60cd1.pdf pdf_icon

IXSR40N60BD1

IXSR 40N60CD1 VCES = 600 VIGBT with DiodeIC25 = 62 AISOPLUS247TMVCE(SAT) = 2.5 V(Electrically Isolated Backside)tfi(typ) = 70 nsShort Circuit SOA CapabilityPreliminary dataSymbol Test Conditions Maximum RatingsISOPLUS 247TM (IXSR)E 153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VGVGEM Transient 30 VCEI

Datasheet: IXSP10N60B2D1 , IXSP15N120B , IXSP20N60B2 , IXSP20N60B2D1 , IXSP24N60B , IXSQ10N60B2D1 , SIW120N65G2P2D , IXSR35N120BD1 , YGW60N65F1A1 , IXSR40N60CD1 , IXST15N120BD1 , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , IXST35N120B , SIW100N65G2P2D , IXST45N120B .

History: IXGP12N100A | IXGH40N30BD1

Keywords - IXSR40N60BD1 transistor datasheet

 IXSR40N60BD1 cross reference
 IXSR40N60BD1 equivalent finder
 IXSR40N60BD1 lookup
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