IXSR40N60CD1 PDF and Equivalents Search

 

IXSR40N60CD1 Specs and Replacement

Type Designator: IXSR40N60CD1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 210 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 62 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 440 pF

Package: ISOPLUS247

 IXSR40N60CD1 Substitution

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IXSR40N60CD1 datasheet

 ..1. Size:38K  ixys
 ixsr40n60cd1.pdf pdf_icon

IXSR40N60CD1

IXSR 40N60CD1 VCES = 600 V IGBT with Diode IC25 = 62 A ISOPLUS247TM VCE(SAT) = 2.5 V (Electrically Isolated Backside) tfi(typ) = 70 ns Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXSR) E 153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V G VGEM Transient 30 V C E I... See More ⇒

 5.1. Size:71K  ixys
 ixsr40n60bd1.pdf pdf_icon

IXSR40N60CD1

IXSR 40N60BD1 IGBT with Diode VCES = 600 V IC25 = 70 A ISOPLUS 247TM VCE(sat) = 2.2 V (Electrically Isolated Backside) tfi(typ) = 120 ns Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VCES TJ = 25 C to 150 C 600 V E 153432 VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC... See More ⇒

Specs: IXSP15N120B , IXSP20N60B2 , IXSP20N60B2D1 , IXSP24N60B , IXSQ10N60B2D1 , SIW120N65G2P2D , IXSR35N120BD1 , IXSR40N60BD1 , SGT40N60FD2PN , IXST15N120BD1 , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , IXST35N120B , SIW100N65G2P2D , IXST45N120B , IXSX35N120BD1 .

History: STGF3HF60HD | HCKW40N120CS2 | KGF20N60PA | STGP30V60F | STGW30H65FB | IXSX40N60BD1 | GT50J325

Keywords - IXSR40N60CD1 transistor spec

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