IXSR40N60CD1 - аналоги, параметры транзистора

IXSR40N60CD1 даташит

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IXSR 40N60CD1 VCES = 600 V IGBT with Diode IC25 = 62 A ISOPLUS247TM VCE(SAT) = 2.5 V (Electrically Isolated Backside) tfi(typ) = 70 ns Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXSR) E 153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V G VGEM Transient 30 V C E I

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IXSR 40N60BD1 IGBT with Diode VCES = 600 V IC25 = 70 A ISOPLUS 247TM VCE(sat) = 2.2 V (Electrically Isolated Backside) tfi(typ) = 120 ns Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VCES TJ = 25 C to 150 C 600 V E 153432 VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC

Другие IGBT... IXSP15N120B , IXSP20N60B2 , IXSP20N60B2D1 , IXSP24N60B , IXSQ10N60B2D1 , SIW120N65G2P2D , IXSR35N120BD1 , IXSR40N60BD1 , SGT40N60FD2PN , IXST15N120BD1 , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , IXST35N120B , SIW100N65G2P2D , IXST45N120B , IXSX35N120BD1 .