All IGBT. DG75X07T2L Datasheet

 

DG75X07T2L Datasheet and Replacement


   Type Designator: DG75X07T2L
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 428 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 90 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 156 nS
   Qgⓘ - Total Gate Charge, typ: 520 nC
   Package: TO247
      - IGBT Cross-Reference

 

DG75X07T2L Datasheet (PDF)

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DG75X07T2L

DG75X07T2L IGBT Discrete DOSEMI IGBT DG75X07T2L 650V/75A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6s short circuit capability Low switching loss

 9.1. Size:483K  cn starpower
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DG75X07T2L

DG75X12T2 IGBT Discrete DOSEMI IGBT DG75X12T2 1200V/75A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10s short circuit capability Low switching loss

Datasheet: SIG25N60B , SIG30N60P , SIG30N60W , DG40F12T2 , DG40H12T2Y , DG50H12T2Z , DG50X07T2 , DG75H12T2 , FGH75T65UPD , DG75X12T2 , MSG100D350FHS , MSG100N350FH , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U .

History: IGC193T120T8RM | DIM1200FSS12-A | IGC99T120T8RH | IGC11T120T6L | IGC07T120T8L | IGP30N60T

Keywords - DG75X07T2L transistor datasheet

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