All IGBT. G7N60C Datasheet

 

G7N60C IGBT. Datasheet pdf. Equivalent

Type Designator: G7N60C

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 60

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 14

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 8.5

Package: TO252AA

G7N60C Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

G7N60C Datasheet (PDF)

9.1. hgtp7n60a4 hgtg7n60a4 hgt1s7n60a4.pdf Size:173K _fairchild_semi

G7N60C
G7N60C

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7Aare MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5Athe best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capabilitydevices have t

9.2. au7n60s ad7n60s at7n60s af7n60s ak7n60s ag7n60s.pdf Size:1852K _anbon

G7N60C
G7N60C

 9.3. lnc7n60d lnd7n60d lng7n60d lnh7n60d.pdf Size:1036K _lonten

G7N60C
G7N60C

LNC7N60D\LND7N60D\LNG7N60D\LNH7N60D Lonten N-channel 600V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 7A resulting device has low conduction resistance, RDS(on),max 1.3 superior switching performance and high avalance Qg,typ 20.6nC energy. Features Low RDS(on) Low gate cha

Datasheet: G34N100E2 , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D , G6N50E , G6N50E1D , IRGP50B60PD1 , G7N60C3 , G7N60C3D , G8P50G , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U .

 

 
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