DG75X07T2L Datasheet. Specs and Replacement

Type Designator: DG75X07T2L  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 428 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 90 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 156 nS

Package: TO247

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DG75X07T2L datasheet

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DG75X07T2L

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DG75X07T2L

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Specs: SIG25N60B, SIG30N60P, SIG30N60W, DG40F12T2, DG40H12T2Y, DG50H12T2Z, DG50X07T2, DG75H12T2, RJH60F5DPQ-A0, DG75X12T2, MSG100D350FHS, MSG100N350FH, GA100TS120U, GA100TS60U, GA125TS120U, GA150TD120U, GA150TS60U

Keywords - DG75X07T2L transistor spec

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