All IGBT. IXST35N120B Datasheet

 

IXST35N120B Datasheet and Replacement


   Type Designator: IXST35N120B
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.6(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 260 pF
   Qgⓘ - Total Gate Charge, typ: 120 nC
   Package: TO268
      - IGBT Cross-Reference

 

IXST35N120B Datasheet (PDF)

 ..1. Size:80K  ixys
 ixst35n120b.pdf pdf_icon

IXST35N120B

IXSH 35N120BIGBT IC25 = 70 AIXST 35N120BVCES = 1200 VVCE(sat) = 3.6 V"S" Series - Improved SCSOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C70 ATO-268 ( IXST)IC90 TC = 90C35 AICM TC = 25C, 1

 ..2. Size:82K  ixys
 ixsh35n120b ixst35n120b.pdf pdf_icon

IXST35N120B

IXSH 35N120BIGBT IC25 = 70 AIXST 35N120BVCES = 1200 VVCE(sat) = 3.6 V"S" Series - Improved SCSOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C70 ATO-268 ( IXST)IC90 TC = 90C35 AICM TC = 25C, 1

 9.1. Size:71K  ixys
 ixst30n60cd1.pdf pdf_icon

IXST35N120B

High Speed IGBT with Diode IXSH 30 N60CD1VCES = 600 VIXSK 30 N60CD1IC25 = 55 AIXST 30 N60CD1VCE(sat) = 2.5 VShort Circuit SOA Capabilitytfi = 70 nsPreliminary dataTO-247AD(IXSH)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 150C 600 V EVCGR TJ = 25C to 150C; RGE = 1 MW 600 VTO-268 (D3)(IXST)VGES Continuous 20 VVGEM Transient 30 VCG

 9.2. Size:129K  ixys
 ixst30n60b.pdf pdf_icon

IXST35N120B

VCES ICES tfiHigh Speed IGBTIXSH/IXST 30N60B 600 V 2.0 V 140 nsIXSH/IXST 30N60C 600 V 2.5 V 70 nsShort Circuit SOA CapabilityTO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC = 25C55 AIC90 TC = 90C30 AGICM

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Datasheet: SIW120N65G2P2D , IXSR35N120BD1 , IXSR40N60BD1 , IXSR40N60CD1 , IXST15N120BD1 , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , RJH3047 , SIW100N65G2P2D , IXST45N120B , IXSX35N120BD1 , IXSX40N60BD1 , IXSX80N60B , IXXA50N60B3 , IXXH100N60B3 , IXXH100N60C3 .

History: MSG40T120FQC | IRG4BC10SD-L | MSG20T65HPT1 | MSG100D350FHS

Keywords - IXST35N120B transistor datasheet

 IXST35N120B cross reference
 IXST35N120B equivalent finder
 IXST35N120B lookup
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 IXST35N120B replacement

 

 
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