SIW100N65G2P2D Datasheet and Replacement
Type Designator: SIW100N65G2P2D
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 42 nS
Coesⓘ - Output Capacitance, typ: 262 pF
Package: TO247
SIW100N65G2P2D substitution
SIW100N65G2P2D Datasheet (PDF)
siw100n65g2p2d.pdf
SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*100N65G2P2DRev. 0.9Nov. 2023www.supersemi.com.cnSIW100N65G2P2D650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 100 Atechnology. The SJ-IGBT series provides lowVCE(sa
Datasheet: IXSR35N120BD1 , IXSR40N60BD1 , IXSR40N60CD1 , IXST15N120BD1 , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , IXST35N120B , GT30F131 , IXST45N120B , IXSX35N120BD1 , IXSX40N60BD1 , IXSX80N60B , IXXA50N60B3 , IXXH100N60B3 , IXXH100N60C3 , IXXH30N60B3D1 .
History: SKM150GAL12V
Keywords - SIW100N65G2P2D transistor datasheet
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SIW100N65G2P2D substitution
SIW100N65G2P2D replacement
History: SKM150GAL12V
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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