All IGBT. SIW100N65G2P2D Datasheet

 

SIW100N65G2P2D IGBT. Datasheet pdf. Equivalent


   Type Designator: SIW100N65G2P2D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 42 nS
   Coesⓘ - Output Capacitance, typ: 262 pF
   Qgⓘ - Total Gate Charge, typ: 170 nC
   Package: TO247

 SIW100N65G2P2D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SIW100N65G2P2D Datasheet (PDF)

 ..1. Size:720K  cn super semi
 siw100n65g2p2d.pdf

SIW100N65G2P2D SIW100N65G2P2D

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*100N65G2P2DRev. 0.9Nov. 2023www.supersemi.com.cnSIW100N65G2P2D650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 100 Atechnology. The SJ-IGBT series provides lowVCE(sa

Datasheet: IXSR35N120BD1 , IXSR40N60BD1 , IXSR40N60CD1 , IXST15N120BD1 , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , IXST35N120B , GT30F131 , IXST45N120B , IXSX35N120BD1 , IXSX40N60BD1 , IXSX80N60B , IXXA50N60B3 , IXXH100N60B3 , IXXH100N60C3 , IXXH30N60B3D1 .

 

 
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