SIW100N65G2P2D Specs and Replacement
Type Designator: SIW100N65G2P2D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
tr ⓘ - Rise Time, typ: 42 nS
Coesⓘ - Output Capacitance, typ: 262 pF
Package: TO247
SIW100N65G2P2D Substitution - IGBT ⓘ Cross-Reference Search
SIW100N65G2P2D datasheet
siw100n65g2p2d.pdf
SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 650V Trench and Super Junction IGBT SI*100N65G2P2D Rev. 0.9 Nov. 2023 www.supersemi.com.cn SIW100N65G2P2D 650V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 650 V designed according to the super junction (SJ) IC 100 A technology. The SJ-IGBT series provides low VCE(sa... See More ⇒
Specs: IXSR35N120BD1 , IXSR40N60BD1 , IXSR40N60CD1 , IXST15N120BD1 , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , IXST35N120B , CRG60T60AK3HD , IXST45N120B , IXSX35N120BD1 , IXSX40N60BD1 , IXSX80N60B , IXXA50N60B3 , IXXH100N60B3 , IXXH100N60C3 , IXXH30N60B3D1 .
History: SIGC03T60SNC | TT025N120EQ | YGW50N65F1A | VS-GB150LH120N | STGW50HF60SD | STGWA40H65FB
Keywords - SIW100N65G2P2D transistor spec
SIW100N65G2P2D cross reference
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SIW100N65G2P2D substitution
SIW100N65G2P2D replacement
History: SIGC03T60SNC | TT025N120EQ | YGW50N65F1A | VS-GB150LH120N | STGW50HF60SD | STGWA40H65FB
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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