All IGBT. MID400-12E4 Datasheet

 

MID400-12E4 Datasheet and Replacement


   Type Designator: MID400-12E4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1700 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 420 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 60 nS
   Qg ⓘ - Total Gate Charge, typ: 1740 nC
   Package: MODULE
 

 MID400-12E4 substitution

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MID400-12E4 Datasheet (PDF)

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MID400-12E4

MII400-12E4 MID400-12E4(T) MDI400-12E4Preliminary DataIC25 = 420 AIGBT ModuleVCES = 1200 Vphaseleg and chopper topolgieswith optional temperature sensorVCE(sat) typ. = 2.2 VMII 400-12E4 MID 400-12E4(T) MDI 400-12E43 3 311T1 T1 10D1 D1 D1193 828 811 1 19 9T2 T2D2 D12 D211 1110 2 10 2 26NTC for ...T version only7FeaturesIGBTs T1 - T2

Datasheet: MIAA10WE600TMH , MIAA10WF600TMH , MIAA15WB600TMH , MIAA15WD600TMH , MIAA15WE600TMH , MIAA20WB600TMH , MIAA20WD600TMH , MIAA20WE600TMH , IKW40N65WR5 , MIEB100W1200TEH , MIEB101H1200EH , MIEB101W1200EH , MII100-12A3 , MII145-12A3 , MII150-12A4 , MII200-12A4 , MII300-12A4 .

History: AIGW40N65H5 | IXXH50N60B3 | AP30G120ASW | IXGP24N60C4D1 | 2MBI100N-120 | BLG40T65FDL-W | OM6526SA

Keywords - MID400-12E4 transistor datasheet

 MID400-12E4 cross reference
 MID400-12E4 equivalent finder
 MID400-12E4 lookup
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 MID400-12E4 replacement

 

 
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