All IGBT. MII150-12A4 Datasheet

 

MII150-12A4 Datasheet and Replacement


   Type Designator: MII150-12A4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 760 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Ic|ⓘ - Maximum Collector Current: 180 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Package: MODULE
      - IGBT Cross-Reference

 

MII150-12A4 Datasheet (PDF)

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MII150-12A4

MII 150-12 A4 MID 150-12 A4MDI 150-12 A4IC25 = 180 AIGBT ModulesVCES = 1200 VVCE(sat) typ. = 2.2 VShort Circuit SOA CapabilitySquare RBSOA3MII MID MDI2113 3 3110988 81 1 19 911 112 2 21010E 72873FeaturesSymbol Conditions Maximum RatingsNPT IGBT technologylow saturation voltageVCES TJ = 25C to 150C 1200 Vlow switching lossesVCGR T

Datasheet: MIAA20WD600TMH , MIAA20WE600TMH , MID400-12E4 , MIEB100W1200TEH , MIEB101H1200EH , MIEB101W1200EH , MII100-12A3 , MII145-12A3 , GT60N321 , MII200-12A4 , MII300-12A4 , MII300-12E4 , MII400-12E4 , MII75-12A3 , MIO1200-25E10 , MIO1200-33E10 , MIO1200-33E11 .

Keywords - MII150-12A4 transistor datasheet

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