MII200-12A4 PDF and Equivalents Search

 

MII200-12A4 Specs and Replacement

Type Designator: MII200-12A4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1130 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Ic| ⓘ - Maximum Collector Current: 270 A @25℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

Package: MODULE

 MII200-12A4 Substitution

- IGBTⓘ Cross-Reference Search

 

MII200-12A4 datasheet

 ..1. Size:113K  ixys
 mii200-12a4.pdf pdf_icon

MII200-12A4

MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4 IC25 = 270 A IGBT Modules VCES = 1200 V VCE(sat) typ. = 2.2 V Short Circuit SOA Capability Square RBSOA 3 MII MID MDI 2 11 3 3 3 1 10 9 8 8 8 1 1 1 9 9 11 11 2 2 2 10 10 E 72873 Features Symbol Conditions Maximum Ratings NPT IGBT technology low saturation voltage VCES TJ = 25 C to 150 C 1200 V low switching losses VCGR ... See More ⇒

Specs: MIAA20WE600TMH, MID400-12E4, MIEB100W1200TEH, MIEB101H1200EH, MIEB101W1200EH, MII100-12A3, MII145-12A3, MII150-12A4, GT30J122, MII300-12A4, MII300-12E4, MII400-12E4, MII75-12A3, MIO1200-25E10, MIO1200-33E10, MIO1200-33E11, MIO1500-25E10

Keywords - MII200-12A4 transistor spec

 MII200-12A4 cross reference
 MII200-12A4 equivalent finder
 MII200-12A4 lookup
 MII200-12A4 substitution
 MII200-12A4 replacement

 

 

 

 

↑ Back to Top
.