MII200-12A4 Datasheet and Replacement
Type Designator: MII200-12A4
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 1130 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic| ⓘ - Maximum Collector Current: 270 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
Package: MODULE
MII200-12A4 substitution
MII200-12A4 Datasheet (PDF)
mii200-12a4.pdf
MII 200-12 A4 MID 200-12 A4MDI 200-12 A4IC25 = 270 AIGBT ModulesVCES = 1200 VVCE(sat) typ. = 2.2 VShort Circuit SOA CapabilitySquare RBSOA3MIIMID MDI2113 3 3110988 81 1 19 911 112 2 21010E 72873FeaturesSymbol Conditions Maximum RatingsNPT IGBT technologylow saturation voltageVCES TJ = 25C to 150C 1200 Vlow switching lossesVCGR
Datasheet: MIAA20WE600TMH , MID400-12E4 , MIEB100W1200TEH , MIEB101H1200EH , MIEB101W1200EH , MII100-12A3 , MII145-12A3 , MII150-12A4 , MBQ50T65FESC , MII300-12A4 , MII300-12E4 , MII400-12E4 , MII75-12A3 , MIO1200-25E10 , MIO1200-33E10 , MIO1200-33E11 , MIO1500-25E10 .
History: APTGT75X120TE3 | SKM195GAR063DN
Keywords - MII200-12A4 transistor datasheet
MII200-12A4 cross reference
MII200-12A4 equivalent finder
MII200-12A4 lookup
MII200-12A4 substitution
MII200-12A4 replacement
History: APTGT75X120TE3 | SKM195GAR063DN
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