All IGBT. MII400-12E4 Datasheet

 

MII400-12E4 IGBT. Datasheet pdf. Equivalent


   Type Designator: MII400-12E4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1700 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 420 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 60 nS
   Qgⓘ - Total Gate Charge, typ: 1740 nC
   Package: MODULE

 MII400-12E4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MII400-12E4 Datasheet (PDF)

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 mii400-12e4 mid400-12e4 mdi400-12e4.pdf

MII400-12E4 MII400-12E4

MII400-12E4 MID400-12E4(T) MDI400-12E4Preliminary DataIC25 = 420 AIGBT ModuleVCES = 1200 Vphaseleg and chopper topolgieswith optional temperature sensorVCE(sat) typ. = 2.2 VMII 400-12E4 MID 400-12E4(T) MDI 400-12E43 3 311T1 T1 10D1 D1 D1193 828 811 1 19 9T2 T2D2 D12 D211 1110 2 10 2 26NTC for ...T version only7FeaturesIGBTs T1 - T2

Datasheet: MIEB101H1200EH , MIEB101W1200EH , MII100-12A3 , MII145-12A3 , MII150-12A4 , MII200-12A4 , MII300-12A4 , MII300-12E4 , YGW75N65F1 , MII75-12A3 , MIO1200-25E10 , MIO1200-33E10 , MIO1200-33E11 , MIO1500-25E10 , MIO1800-17E10 , MIO2400-17E10 , MIO600-65E11 .

 

 
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