MII400-12E4 PDF and Equivalents Search

 

MII400-12E4 Specs and Replacement

Type Designator: MII400-12E4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1700 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 420 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 60 nS

Package: MODULE

 MII400-12E4 Substitution

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MII400-12E4 datasheet

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 mii400-12e4 mid400-12e4 mdi400-12e4.pdf pdf_icon

MII400-12E4

MII400-12E4 MID400-12E4(T) MDI400-12E4 Preliminary Data IC25 = 420 A IGBT Module VCES = 1200 V phaseleg and chopper topolgies with optional temperature sensor VCE(sat) typ. = 2.2 V MII 400-12E4 MID 400-12E4(T) MDI 400-12E4 3 3 3 11 T1 T1 10 D1 D1 D11 9 3 8 2 8 8 1 1 1 1 9 9 T2 T2 D2 D12 D2 11 11 10 2 10 2 2 6 NTC for ...T version only 7 Features IGBTs T1 - T2 ... See More ⇒

Specs: MIEB101H1200EH, MIEB101W1200EH, MII100-12A3, MII145-12A3, MII150-12A4, MII200-12A4, MII300-12A4, MII300-12E4, KGF75N65KDF, MII75-12A3, MIO1200-25E10, MIO1200-33E10, MIO1200-33E11, MIO1500-25E10, MIO1800-17E10, MIO2400-17E10, MIO600-65E11

Keywords - MII400-12E4 transistor spec

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