MII75-12A3 Specs and Replacement
Type Designator: MII75-12A3
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 370 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic| ⓘ - Maximum Collector Current: 90 A @25℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
Package: MODULE MII75-12A3 Substitution - IGBT ⓘ Cross-Reference Search
MII75-12A3 datasheet
mii75-12a3.pdf
MII75-12A3 VCES = 2x 1200V IGBT (NPT) Module I= 90 A C25 VCE(sat) = 2.2V Phase leg Part number MII75-12A3 Backside isolated 1 7 6 3 4 5 2 Features / Advantages Applications Package Y4 NPT IGBT technology AC motor drives Isolation Voltage V 3600 low saturation voltage Solar inverter Industry standard outline low switching losses Medical ... See More ⇒
Specs: MIEB101W1200EH, MII100-12A3, MII145-12A3, MII150-12A4, MII200-12A4, MII300-12A4, MII300-12E4, MII400-12E4, IRGB20B60PD1, MIO1200-25E10, MIO1200-33E10, MIO1200-33E11, MIO1500-25E10, MIO1800-17E10, MIO2400-17E10, MIO600-65E11, MITA10WB1200TMH
Keywords - MII75-12A3 transistor spec
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