MIO1200-33E10 Specs and Replacement
Type Designator: MIO1200-33E10
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3300 V
|Ic| ⓘ - Maximum Collector Current: 1650 A @25℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
Package: E10 MIO1200-33E10 Substitution - IGBT ⓘ Cross-Reference Search
MIO1200-33E10 datasheet
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Specs: MII145-12A3, MII150-12A4, MII200-12A4, MII300-12A4, MII300-12E4, MII400-12E4, MII75-12A3, MIO1200-25E10, IRGP4062D, MIO1200-33E11, MIO1500-25E10, MIO1800-17E10, MIO2400-17E10, MIO600-65E11, MITA10WB1200TMH, MITA15WB1200TMH, MITA30WB600TMH
Keywords - MIO1200-33E10 transistor spec
MIO1200-33E10 cross reference
MIO1200-33E10 equivalent finder
MIO1200-33E10 lookup
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MIO1200-33E10 replacement
History: SGT75T65SDM1P7 | MITA30WB600TMH | IKA10N65ET6 | MIO1800-17E10 | MITB15WB1200TMH | MIXA10WB1200TML
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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