IGC13T120T6L Specs and Replacement
Type Designator: IGC13T120T6L
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 10 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Coesⓘ - Output Capacitance, typ: 60 pF
Package: CHIP
IGC13T120T6L Substitution - IGBT ⓘ Cross-Reference Search
IGC13T120T6L datasheet
igc13t120t6l.pdf
IGC13T120T6L IGBT4 Low Power Chip Features 1200V Trench + Field stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC13T120T6L 1200V 10A 3.54 x 3.81 mm2 sawn on foil MECHANICAL ... See More ⇒
Specs: MIXA10W1200TML, IGC18T120T8Q, MIXA10WB1200TED, IGC18T120T8L, MIXA10WB1200TMH, MIXA10WB1200TML, IGC18T120T6L, MIXA150W1200TEH, FGA60N65SMD, MIXA151W1200EH, IGC54T65T8RM, MIXA20W1200MC, IGC54T65R3QE, MIXA20W1200TMH, IGC50T120T8RQ, MIXA20W1200TML, IGC50T120T8RL
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