All IGBT. IGC13T120T6L Datasheet

 

IGC13T120T6L Datasheet and Replacement


   Type Designator: IGC13T120T6L
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 60 pF
   Package: CHIP
      - IGBT Cross-Reference

 

IGC13T120T6L Datasheet (PDF)

 ..1. Size:71K  infineon
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IGC13T120T6L

IGC13T120T6L IGBT4 Low Power Chip Features: 1200V Trench + Field stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC13T120T6L 1200V 10A 3.54 x 3.81 mm2 sawn on foil MECHANICAL

Datasheet: MIXA10W1200TML , IGC18T120T8Q , MIXA10WB1200TED , IGC18T120T8L , MIXA10WB1200TMH , MIXA10WB1200TML , IGC18T120T6L , MIXA150W1200TEH , GT30F126 , MIXA151W1200EH , IGC54T65T8RM , MIXA20W1200MC , IGC54T65R3QE , MIXA20W1200TMH , IGC50T120T8RQ , MIXA20W1200TML , IGC50T120T8RL .

History: TGAN15S135FD

Keywords - IGC13T120T6L transistor datasheet

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