MKI100-12E8 Datasheet and Replacement
Type Designator: MKI100-12E8
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic| ⓘ - Maximum Collector Current: 165 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Package: MODULE
MKI100-12E8 substitution
MKI100-12E8 Datasheet (PDF)
mki100-12f8.pdf
Advanced Technical Information MKI 100-12F8IC25 = 125 AIGBT ModulesVCES = 1200 VH BridgeVCE(sat) typ. = 3.3 VShort Circuit SOA CapabilitySquare RBSOA13, 211 92 10191511341214, 20MKIFeatures IGBTs Fast NPT IGBTsSymbol Conditions Maximum Ratings - low saturation voltage- positive temperature coefficient forVCES TVJ = 25C to 150C 1200 Veasy
Datasheet: MIXA80W1200TED , IGC89T170S8RM , MIXA80W1200TEH , IGC82T170S8RM , MIXA80WB1200TEH , IGC76T65T8RM , MIXA81H1200EH , IGC70T120T8RQ , FGL60N100BNTD , MKI100-12F8 , MKI50-06A7 , MKI50-06A7T , MKI50-12E7 , MKI50-12F7 , MKI75-06A7 , MKI75-06A7T , MKI75-12E8 .
History: MII300-12A4 | STGWA60V60DF | NGTB40N120IHRWG | RJH60D7DPQ-E0 | IXGB200N60B3 | AOK50B60D1 | MIXA10W1200TML
Keywords - MKI100-12E8 transistor datasheet
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History: MII300-12A4 | STGWA60V60DF | NGTB40N120IHRWG | RJH60D7DPQ-E0 | IXGB200N60B3 | AOK50B60D1 | MIXA10W1200TML
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