MKI100-12E8 PDF and Equivalents Search

 

MKI100-12E8 Specs and Replacement

Type Designator: MKI100-12E8

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Ic| ⓘ - Maximum Collector Current: 165 A @25℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

Package: MODULE

 MKI100-12E8 Substitution

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MKI100-12E8 datasheet

 5.1. Size:85K  ixys
 mki100-12f8.pdf pdf_icon

MKI100-12E8

Advanced Technical Information MKI 100-12F8 IC25 = 125 A IGBT Modules VCES = 1200 V H Bridge VCE(sat) typ. = 3.3 V Short Circuit SOA Capability Square RBSOA 13, 21 1 9 2 10 19 15 11 3 4 12 14, 20 MKI Features IGBTs Fast NPT IGBTs Symbol Conditions Maximum Ratings - low saturation voltage - positive temperature coefficient for VCES TVJ = 25 C to 150 C 1200 V easy ... See More ⇒

Specs: MIXA80W1200TED , IGC89T170S8RM , MIXA80W1200TEH , IGC82T170S8RM , MIXA80WB1200TEH , IGC76T65T8RM , MIXA81H1200EH , IGC70T120T8RQ , MGD623S , MKI100-12F8 , MKI50-06A7 , MKI50-06A7T , MKI50-12E7 , MKI50-12F7 , MKI75-06A7 , MKI75-06A7T , MKI75-12E8 .

Keywords - MKI100-12E8 transistor spec

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