All IGBT. MKI100-12F8 Datasheet

 

MKI100-12F8 Datasheet and Replacement


   Type Designator: MKI100-12F8
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 640 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Ic| ⓘ - Maximum Collector Current: 125 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Qg ⓘ - Total Gate Charge, typ: 1100 nC
   Package: MODULE
 

 MKI100-12F8 substitution

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MKI100-12F8 Datasheet (PDF)

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MKI100-12F8

Advanced Technical Information MKI 100-12F8IC25 = 125 AIGBT ModulesVCES = 1200 VH BridgeVCE(sat) typ. = 3.3 VShort Circuit SOA CapabilitySquare RBSOA13, 211 92 10191511341214, 20MKIFeatures IGBTs Fast NPT IGBTsSymbol Conditions Maximum Ratings - low saturation voltage- positive temperature coefficient forVCES TVJ = 25C to 150C 1200 Veasy

Datasheet: IGC89T170S8RM , MIXA80W1200TEH , IGC82T170S8RM , MIXA80WB1200TEH , IGC76T65T8RM , MIXA81H1200EH , IGC70T120T8RQ , MKI100-12E8 , STGW60V60DF , MKI50-06A7 , MKI50-06A7T , MKI50-12E7 , MKI50-12F7 , MKI75-06A7 , MKI75-06A7T , MKI75-12E8 , MKI80-06T6K .

History: NGTG15N60S1EG | MKI100-12E8 | NGTB40N120IHRWG | MII300-12A4 | IXGB200N60B3 | AOK50B60D1 | MIXA10W1200TML

Keywords - MKI100-12F8 transistor datasheet

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