MKI100-12F8 Datasheet and Replacement
Type Designator: MKI100-12F8
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 640 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic|ⓘ - Maximum Collector Current: 125 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
Package: MODULE
- IGBT Cross-Reference
MKI100-12F8 Datasheet (PDF)
mki100-12f8.pdf
Advanced Technical Information MKI 100-12F8IC25 = 125 AIGBT ModulesVCES = 1200 VH BridgeVCE(sat) typ. = 3.3 VShort Circuit SOA CapabilitySquare RBSOA13, 211 92 10191511341214, 20MKIFeatures IGBTs Fast NPT IGBTsSymbol Conditions Maximum Ratings - low saturation voltage- positive temperature coefficient forVCES TVJ = 25C to 150C 1200 Veasy
Datasheet: IGC89T170S8RM , MIXA80W1200TEH , IGC82T170S8RM , MIXA80WB1200TEH , IGC76T65T8RM , MIXA81H1200EH , IGC70T120T8RQ , MKI100-12E8 , IRG4PC50UD , MKI50-06A7 , MKI50-06A7T , MKI50-12E7 , MKI50-12F7 , MKI75-06A7 , MKI75-06A7T , MKI75-12E8 , MKI80-06T6K .
History: MWI60-06G6K | FGW30N120H
Keywords - MKI100-12F8 transistor datasheet
MKI100-12F8 cross reference
MKI100-12F8 equivalent finder
MKI100-12F8 lookup
MKI100-12F8 substitution
MKI100-12F8 replacement
History: MWI60-06G6K | FGW30N120H
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