All IGBT. MKI100-12F8 Datasheet

 

MKI100-12F8 IGBT. Datasheet pdf. Equivalent


   Type Designator: MKI100-12F8
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 640 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Ic|ⓘ - Maximum Collector Current: 125 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
   Package: MODULE

 MKI100-12F8 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MKI100-12F8 Datasheet (PDF)

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 mki100-12f8.pdf

MKI100-12F8 MKI100-12F8

Advanced Technical Information MKI 100-12F8IC25 = 125 AIGBT ModulesVCES = 1200 VH BridgeVCE(sat) typ. = 3.3 VShort Circuit SOA CapabilitySquare RBSOA13, 211 92 10191511341214, 20MKIFeatures IGBTs Fast NPT IGBTsSymbol Conditions Maximum Ratings - low saturation voltage- positive temperature coefficient forVCES TVJ = 25C to 150C 1200 Veasy

Datasheet: IGC89T170S8RM , MIXA80W1200TEH , IGC82T170S8RM , MIXA80WB1200TEH , IGC76T65T8RM , MIXA81H1200EH , IGC70T120T8RQ , MKI100-12E8 , XNF15N60T , MKI50-06A7 , MKI50-06A7T , MKI50-12E7 , MKI50-12F7 , MKI75-06A7 , MKI75-06A7T , MKI75-12E8 , MKI80-06T6K .

 

 
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