GA300TD60U Specs and Replacement
Type Designator: GA300TD60U
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 880 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 300 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 282 nS
Coesⓘ - Output Capacitance, typ: 1735 pF
Package: MODULE GA300TD60U Substitution - IGBT ⓘ Cross-Reference Search
GA300TD60U datasheet
ga300td60u.pdf
PD -50057D GA300TD60U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Features VCES = 600V Generation 4 IGBT technology UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.80V kHz in resonant mode Very low conduction and switching losses @VGE = 15V, IC = 300A HEXFRED antiparallel diodes with ultra- ... See More ⇒
Specs: GA125TS120U, GA150TD120U, GA150TS60U, GA200SA60S, GA200SA60U, GA200TD120U, GA250TD120U, GA250TS60U, IRG4PC40W, GA400TD25S, GA400TD60U, GA500TD60U, GA50TS120U, GA600GD25S, GA75TS120U, GA75TS60U, GT10G101
Keywords - GA300TD60U transistor spec
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