All IGBT. GA500TD60U Datasheet

 

GA500TD60U Datasheet and Replacement


   Type Designator: GA500TD60U
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1550 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 500 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 430 nS
   Coesⓘ - Output Capacitance, typ: 2920 pF
   Qg ⓘ - Total Gate Charge, typ: 2100 nC
   Package: MODULE
 

 GA500TD60U substitution

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GA500TD60U Datasheet (PDF)

 ..1. Size:231K  international rectifier
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GA500TD60U

PD - 50048CGA500TD60U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT DOUBLE INT-A-PAKFeaturesVCES = 600V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 1.9V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 500A HEXFRED antiparallel diodes with ultra-

Datasheet: GA200SA60S , GA200SA60U , GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S , GA400TD60U , HGTG30N60A4 , GA50TS120U , GA600GD25S , GA75TS120U , GA75TS60U , GT10G101 , GT10J301 , GT10J311 , GT10Q301 .

History: RJH1CV7DPK | MMG100S170B6TC | GA250TS60U

Keywords - GA500TD60U transistor datasheet

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