All IGBT. GA50TS120U Datasheet

 

GA50TS120U IGBT. Datasheet pdf. Equivalent


   Type Designator: GA50TS120U
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 280 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 82 nS
   Coesⓘ - Output Capacitance, typ: 397 pF
   Qgⓘ - Total Gate Charge, typ: 397 nC
   Package: MODULE

 GA50TS120U Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GA50TS120U Datasheet (PDF)

 ..1. Size:211K  international rectifier
 ga50ts120u.pdf

GA50TS120U GA50TS120U

PD - 50064AGA50TS120U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesVCES = 1200V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 2.4V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 50A HEXFRED antiparallel diodes with ultra- soft

Datasheet: GA200SA60U , GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S , GA400TD60U , GA500TD60U , YGW75N65F1 , GA600GD25S , GA75TS120U , GA75TS60U , GT10G101 , GT10J301 , GT10J311 , GT10Q301 , GT10Q311 .

 

 
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