MWI200-06A8 Datasheet and Replacement
Type Designator: MWI200-06A8
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 675 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Ic|ⓘ - Maximum Collector Current: 225 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Qgⓘ - Total Gate Charge, typ: 670 nC
Package: MODULE
- IGBT Cross-Reference
MWI200-06A8 Datasheet (PDF)
mwi200-06a8.pdf

MWI 200-06 A8IC25 = 225 AIGBT ModulesVCES = 600 VSixpackVCE(sat) typ.= 2.0 VShort Circuit SOA CapabilitySquare RBSOA13, 21Preliminary data1 5 92 6 101917153 7 11 E728734 8 12See outline drawing for pin arrangement14, 20Features IGBTsNPT IGBT technologySymbol Conditions Maximum Ratings low saturation voltagelow switching lossesVCE
Datasheet: MWI100-06A8 , MWI100-12A8 , MWI100-12E8 , MWI100-12T8T , MWI150-06A8 , MWI150-12T8T , MWI15-12A6K , MWI15-12A7 , RJP63F3DPP-M0 , MWI225-12E9 , MWI225-17E9 , MWI25-12A7 , MWI25-12A7T , MWI25-12E7 , MWI300-12E9 , MWI300-17E9 , MWI30-06A7 .
Keywords - MWI200-06A8 transistor datasheet
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