All IGBT. MWI200-06A8 Datasheet

 

MWI200-06A8 Datasheet and Replacement


   Type Designator: MWI200-06A8
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 675 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Ic|ⓘ - Maximum Collector Current: 225 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Qgⓘ - Total Gate Charge, typ: 670 nC
   Package: MODULE
      - IGBT Cross-Reference

 

MWI200-06A8 Datasheet (PDF)

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MWI200-06A8

MWI 200-06 A8IC25 = 225 AIGBT ModulesVCES = 600 VSixpackVCE(sat) typ.= 2.0 VShort Circuit SOA CapabilitySquare RBSOA13, 21Preliminary data1 5 92 6 101917153 7 11 E728734 8 12See outline drawing for pin arrangement14, 20Features IGBTsNPT IGBT technologySymbol Conditions Maximum Ratings low saturation voltagelow switching lossesVCE

Datasheet: MWI100-06A8 , MWI100-12A8 , MWI100-12E8 , MWI100-12T8T , MWI150-06A8 , MWI150-12T8T , MWI15-12A6K , MWI15-12A7 , RJP63F3DPP-M0 , MWI225-12E9 , MWI225-17E9 , MWI25-12A7 , MWI25-12A7T , MWI25-12E7 , MWI300-12E9 , MWI300-17E9 , MWI30-06A7 .

Keywords - MWI200-06A8 transistor datasheet

 MWI200-06A8 cross reference
 MWI200-06A8 equivalent finder
 MWI200-06A8 lookup
 MWI200-06A8 substitution
 MWI200-06A8 replacement

 

 
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