MWI200-06A8 Spec and Replacement
Type Designator: MWI200-06A8
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 675 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Ic| ⓘ - Maximum Collector Current: 225 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Package: MODULE
MWI200-06A8 Transistor Equivalent Substitute - IGBT Cross-Reference Search
MWI200-06A8 specs
mwi200-06a8.pdf
MWI 200-06 A8 IC25 = 225 A IGBT Modules VCES = 600 V Sixpack VCE(sat) typ.= 2.0 V Short Circuit SOA Capability Square RBSOA 13, 21 Preliminary data 1 5 9 2 6 10 19 17 15 3 7 11 E72873 4 8 12 See outline drawing for pin arrangement 14, 20 Features IGBTs NPT IGBT technology Symbol Conditions Maximum Ratings low saturation voltage low switching losses VCE... See More ⇒
Specs: MWI100-06A8 , MWI100-12A8 , MWI100-12E8 , MWI100-12T8T , MWI150-06A8 , MWI150-12T8T , MWI15-12A6K , MWI15-12A7 , BT40T60ANF , MWI225-12E9 , MWI225-17E9 , MWI25-12A7 , MWI25-12A7T , MWI25-12E7 , MWI300-12E9 , MWI300-17E9 , MWI30-06A7 .
Keywords - MWI200-06A8 transistor spec
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